IRFR5305TRPBF vs IPD380P06NMATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRPBF sa pamamagitan ng Infineon at IPD380P06NMATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR5305TRPBF | IPD380P06NMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55 C to +150 C (junction) |
| Packhaging | TO-252AA (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | OptiMOS P-channel trench |
| Level ng MSL | 1 | 1 |
| Tindminan RoHS | Compliant (Pb-free PBF suffix) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage V(BR)DSS | — | 60 V |
| Patuloy na Drain Current (TC=25°C) | — | 35 A |
| Power Dissipation (Tc) | — | 125 W |
| Gate Drive | — | Logic-level compatible |
| Avalanche Rated | — | Yes (per manufacturer datasheet) |
| Target Applications | — | Reverse-polarity protection, load switch, BMS, high-side switch |
| Lead-Free | — | Yes |
| Automotive Qualified | — | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] |