IRFR5305TRPBF vs IPD380P06NMATMA1 比較

詳細並排比較 IRFR5305TRPBF 由 Infineon 與 IPD380P06NMATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 啟用中
Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 ✓ 啟用中

規格比較

參數 IRFR5305TRPBF IPD380P06NMATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
工作溫度範圍 -55 C to +175 C -55 C to +150 C (junction)
封裝 TO-252AA (DPAK) PG-TO252-3 (DPAK), surface mount
安裝類型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) OptiMOS P-channel trench
MSL 等級 1 1
RoHS 狀態 Compliant (Pb-free PBF suffix) Compliant
Lead-Free Finish Yes (PBF suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage V(BR)DSS — 60 V
連續汲極電流 (TC=25°C) — 35 A
Power Dissipation (Tc) — 125 W
Gate Drive — Logic-level compatible
Avalanche Rated — Yes (per manufacturer datasheet)
Target Applications — Reverse-polarity protection, load switch, BMS, high-side switch
Lead-Free — Yes
Automotive Qualified — Not specified in provided data [DATA_NEEDED: AEC-Q100 grade]

資料表與資源

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