IRFS4010TRLPBF vs IRFS7440TRLPBF Perbandingan
Perbandingan bersamaan detil IRFS4010TRLPBF dari Infineon dan IRFS7440TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFS4010TRLPBF | IRFS7440TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | IR MOSFET (HEXFET) | MOSFET (Metal Oxide Semiconductor) |
| Drain-to-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 180 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | 4.7 mOhm | — |
| Gate-to-Source Voltage (VGS) max | Plus or minus 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | 143 nC | 90 nC (typical) |
| Power Dissipation (PD) at TC=25C | 375 W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | D2PAK (TO-263AB), surface mount | TO-263 (D2PAK), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive Voltage | 10 V (normal level, optimized) | — |
| Status RoHS | Compliant | Compliant (lead-free) |
| Level MSL | 1 | — |
| Qualification | JEDEC standard | JEDEC standard |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET |
| Continuous Drain Current (ID) at Tc=25C | — | 120 A |
| Power Dissipation (PD) at Tc=25C | — | 208 W |
| On-Resistance (RDS(on)) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Drive Voltage (optimized) | — | 10 V (normal level) |
| Operating Frequency Range (optimized) | — | <100 kHz |
| Rentang Suhu Kerja | — | [DATA_NEEDED: junction temperature range] |