IRFZ44NSTRLPBF vs FQP50N06 Perbandingan
Perbandingan bersamaan detil IRFZ44NSTRLPBF dari Infineon dan FQP50N06 dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFZ44NSTRLPBF | FQP50N06 |
|---|---|---|
| Merek | Infineon | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) range] |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | [DATA_NEEDED: Qg] |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Rentang Suhu Kerja | -55C to +175C | -55C to +175C (junction) |
| Paket | D2PAK (TO-263) | TO-220-3 (through-hole) |
| Tipe Mounting | Surface Mount | Through Hole |
| Technology | HEXFET | Planar Stripe DMOS |
| Status RoHS | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Part Number | — | FQP50N06 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| Maximum Power Dissipation (PD) at Tc | — | 120 W |
| On-Resistance Rds(on) max at VGS=10V | — | [DATA_NEEDED: Rds(on) max] |
| On-Resistance Rds(on) typical at VGS=10V | — | 0.022 ohm |
| Channel Mode | — | Enhancement |
| Lead-Free | — | Yes |