IRFZ44NSTRLPBF vs FQP50N06 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ44NSTRLPBF sa pamamagitan ng Infineon at FQP50N06 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFZ44NSTRLPBF FQP50N06
Brand Infineon onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 49 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) range]
Drain-Source On-Resistance RDS(on) max 17.5 mOhm at VGS=10V —
Total Gate Charge (Qg) 42 nC [DATA_NEEDED: Qg]
Power Dissipation (TC) 94 W —
Power Dissipation (TA) 3.8 W —
Hanay ng Temperature na Operasyon -55C to +175C -55C to +175C (junction)
Packhaging D2PAK (TO-263) TO-220-3 (through-hole)
Uri ng Pagpapasok Surface Mount Through Hole
Technology HEXFET Planar Stripe DMOS
Tindminan RoHS Compliant Compliant
Lead-Free (PBF suffix) Yes —
Manufacturer — onsemi (formerly Fairchild Semiconductor)
Part Number — FQP50N06
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (ID) at Tc — 50 A
Maximum Power Dissipation (PD) at Tc — 120 W
On-Resistance Rds(on) max at VGS=10V — [DATA_NEEDED: Rds(on) max]
On-Resistance Rds(on) typical at VGS=10V — 0.022 ohm
Channel Mode — Enhancement
Lead-Free — Yes

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