IRFZ44NSTRLPBF vs FQP50N06 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFZ44NSTRLPBF tarafından Infineon ve FQP50N06 tarafından onsemiAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFZ44NSTRLPBF | FQP50N06 |
|---|---|---|
| Marka | Infineon | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) range] |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | [DATA_NEEDED: Qg] |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C | -55C to +175C (junction) |
| Paket | D2PAK (TO-263) | TO-220-3 (through-hole) |
| Montaj Türü | Surface Mount | Through Hole |
| Technology | HEXFET | Planar Stripe DMOS |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Part Number | — | FQP50N06 |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| Maximum Power Dissipation (PD) at Tc | — | 120 W |
| On-Resistance Rds(on) max at VGS=10V | — | [DATA_NEEDED: Rds(on) max] |
| On-Resistance Rds(on) typical at VGS=10V | — | 0.022 ohm |
| Channel Mode | — | Enhancement |
| Lead-Free | — | Yes |