IRFZ44NSTRLPBF vs FQP50N06 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ44NSTRLPBF disebabkan oleh Infineon dan FQP50N06 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFZ44NSTRLPBF | FQP50N06 |
|---|---|---|
| Merek | Infineon | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) range] |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | [DATA_NEEDED: Qg] |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55C to +175C (junction) |
| Kemasan | D2PAK (TO-263) | TO-220-3 (through-hole) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Technology | HEXFET | Planar Stripe DMOS |
| Status RoHS | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Part Number | — | FQP50N06 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| Maximum Power Dissipation (PD) at Tc | — | 120 W |
| On-Resistance Rds(on) max at VGS=10V | — | [DATA_NEEDED: Rds(on) max] |
| On-Resistance Rds(on) typical at VGS=10V | — | 0.022 ohm |
| Channel Mode | — | Enhancement |
| Lead-Free | — | Yes |