IRLML0040TRPBF vs IRF8736TRPBF Perbandingan
Perbandingan bersamaan detil IRLML0040TRPBF dari Infineon dan IRF8736TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML0040TRPBF | IRF8736TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25C | 3.6 A | 18 A |
| Pulsed Drain Current (IDM) | 14 A | — |
| RDS(on) Max at VGS=10V | 56 mOhm | — |
| Gate-to-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Total Gate Charge (Qg) | 2.6 nC | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Suhu Hubung Kerja | -55C to +150C | — |
| Technology | IR MOSFET / HEXFET | StrongIRFET / HEXFET |
| Paket | Micro3 (SOT-23) | SO-8 (8-SO, MS-012AA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification Level | Consumer (per JEDEC JSD47F) | — |
| Moisture Sensitivity Level | MSL1 (per IPC/JEDEC J-STD-020D) | — |
| RoHS Compliance | Compliant (no lead, no bromide, no halogen) | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |