IRLML0040TRPBF vs IRF8736TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML0040TRPBF disebabkan oleh Infineon dan IRF8736TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML0040TRPBF | IRF8736TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25C | 3.6 A | 18 A |
| Pulsed Drain Current (IDM) | 14 A | — |
| RDS(on) Max at VGS=10V | 56 mOhm | — |
| Gate-to-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Total Gate Charge (Qg) | 2.6 nC | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Technology | IR MOSFET / HEXFET | StrongIRFET / HEXFET |
| Kemasan | Micro3 (SOT-23) | SO-8 (8-SO, MS-012AA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification Level | Consumer (per JEDEC JSD47F) | — |
| Moisture Sensitivity Level | MSL1 (per IPC/JEDEC J-STD-020D) | — |
| RoHS Compliance | Compliant (no lead, no bromide, no halogen) | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |