IRLML6346TRPBF vs BSS308PEH6327XTSA1 Perbandingan
Perbandingan bersamaan detil IRLML6346TRPBF dari Infineon dan BSS308PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRLML6346TRPBF | BSS308PEH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | -2 A (Ta) |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| Suhu Hubung Kerja | -55C to +150C | — |
| Paket | Micro3 / SOT-23 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | — |
| Level MSL | 1 | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| Tipe Transistor | — | P-Channel Enhancement Mode MOSFET |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Rentang Suhu Kerja | — | -55 °C to +150 °C |
| Paket / Case | — | PG-SOT23 (SOT-23-3) |
| Jumlah Pin | — | 3 |
| Qualification | — | AEC-Q101 Automotive |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |