IRLML6346TRPBF vs BSS308PEH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLML6346TRPBF sa pamamagitan ng Infineon at BSS308PEH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLML6346TRPBF IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLML6346TRPBF BSS308PEH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V -30 V
Continuous Drain Current (ID) 3.4 A (TA=25C) -2 A (Ta)
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=2.5V 63 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: gate threshold voltage]
Gate Drive Capability 2.5V logic-level —
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging Micro3 / SOT-23 —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET Power MOSFET —
Level ng MSL 1 —
Lead-Free Finish Yes (PBF suffix) —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS P (small signal / small power MOSFET)
Uri ng Transistor — P-Channel Enhancement Mode MOSFET
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD) — 500 mW (Ta)
Hanay ng Temperature na Operasyon — -55 °C to +150 °C
Packhaging / Kaso — PG-SOT23 (SOT-23-3)
Bilang ng Pins — 3
Qualification — AEC-Q101 Automotive
Packaging — Tape & Reel (T/R)
Standard Reel Quantity — 3000 pcs

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