IRS2101STRPBF vs IR2101STRPBF Perbandingan

Perbandingan bersamaan detil IRS2101STRPBF dari Infineon dan IR2101STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2101STRPBF IR2101STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type High-Side, Low-Side (Half-Bridge) Non-Inverting
Number of Drivers 2 2
Jumlah Output 2-OUT —
Konfigurasi Output Non-Inverting —
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V / 5 V / 15 V CMOS/LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) —
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
Suhu Kerja -40C to +125C -40 C to +125 C
Paket 8-SOIC (SOIC-8) 8-SOIC (0.154 inch, 3.90 mm Width)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
Status RoHS Compliant (PBF suffix) Compliant
Configuration — Half-Bridge (High-Side and Low-Side), Independent
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Level MSL — MSL 3

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