IRS2101STRPBF vs IR2101STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRS2101STRPBF sa pamamagitan ng Infineon at IR2101STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRS2101STRPBF IR2101STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Type High-Side, Low-Side (Half-Bridge) Non-Inverting
Number of Drivers 2 2
Bilang ng Outputs 2-OUT —
Output Kumpigurasyon Non-Inverting —
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V / 5 V / 15 V CMOS/LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) —
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
Temperature na Operasyon -40C to +125C -40 C to +125 C
Packhaging 8-SOIC (SOIC-8) 8-SOIC (0.154 inch, 3.90 mm Width)
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
Tindminan RoHS Compliant (PBF suffix) Compliant
Configuration — Half-Bridge (High-Side and Low-Side), Independent
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Level ng MSL — MSL 3

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