IRS2112STRPBF vs IRS2110STRPBF Perbandingan

Perbandingan bersamaan detil IRS2112STRPBF dari Infineon dan IRS2110STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2112STRPBF IRS2110STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-bridge (high-side + low-side) —
High-side Offset Voltage (max) 600 V —
Output Source Current (typ) 0.29 A —
Output Sink Current (typ) 0.6 A —
Gate Drive Supply Range (VCC) 10 V to 20 V —
Logic Supply Range (VDD) 3.3 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/TTL CMOS/TTL compatible (3.3 V logic compatible)
Undervoltage Lockout Both channels (VCC and VBS) Yes (VCC and VBS)
Propagation Delay (typ) [DATA_NEEDED: propagation delay] —
dV/dt Immunity Yes (negative transient tolerant) —
Shutdown Input Yes (active-low) Active-low, forces both outputs low
Paket 16-pin SOIC wide-body 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40 C to +125 C —
Level MSL 2 (1 year floor life) 3 (168 hours)
Status RoHS Compliant (Pb-free PBF suffix) —
Driver Configuration — Half-Bridge
Number of Drivers — 2 (High-Side and Low-Side)
Jumlah Output — 2
Tipe Output — Non-Inverting
Maximum Offset Voltage — 500 V
Gate Drive Supply (VCC) — 10 V to 20 V
Source/Sink Output Current (typ.) — 2.5 A / 2.5 A
Propagation Delay ton/toff (typ.) — 30 ns / 30 ns
Rise/Fall Time (typ.) — 17 ns / 25 ns
Bootstrap Diode — Integrated
Suhu Kerja — -40 C to +150 C
Lead-Free / RoHS — Lead-Free, RoHS Compliant

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