IRS2112STRPBF vs IRS2110STRPBF 比較

詳細並排比較 IRS2112STRPBF 由 Infineon 與 IRS2110STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2112STRPBF IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF ✓ 啟用中
Infineon
IRS2110STRPBF IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF ✓ 啟用中

規格比較

參數 IRS2112STRPBF IRS2110STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-bridge (high-side + low-side) —
High-side Offset Voltage (max) 600 V —
Output Source Current (typ) 0.29 A —
Output Sink Current (typ) 0.6 A —
Gate Drive Supply Range (VCC) 10 V to 20 V —
Logic Supply Range (VDD) 3.3 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/TTL CMOS/TTL compatible (3.3 V logic compatible)
Undervoltage Lockout Both channels (VCC and VBS) Yes (VCC and VBS)
Propagation Delay (typ) [DATA_NEEDED: propagation delay] —
dV/dt Immunity Yes (negative transient tolerant) —
Shutdown Input Yes (active-low) Active-low, forces both outputs low
封裝 16-pin SOIC wide-body 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 C to +125 C —
MSL 等級 2 (1 year floor life) 3 (168 hours)
RoHS 狀態 Compliant (Pb-free PBF suffix) —
Driver Configuration — Half-Bridge
Number of Drivers — 2 (High-Side and Low-Side)
輸出數量 — 2
輸出類型 — Non-Inverting
Maximum Offset Voltage — 500 V
Gate Drive Supply (VCC) — 10 V to 20 V
Source/Sink Output Current (typ.) — 2.5 A / 2.5 A
Propagation Delay ton/toff (typ.) — 30 ns / 30 ns
Rise/Fall Time (typ.) — 17 ns / 25 ns
Bootstrap Diode — Integrated
工作溫度 — -40 C to +150 C
Lead-Free / RoHS — Lead-Free, RoHS Compliant

資料表與資源

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