ISC008N06LM6ATMA1 vs ISC151N08NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC008N06LM6ATMA1 dari Infineon dan ISC151N08NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC008N06LM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) at Ta | 44 A | — |
| Pulsed Drain Current (ID, pulse) at Tc | 378 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 221 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (1.0 V to 2.4 V typical) | — |
| Rentang Suhu Kerja | -55 C to +175 C (Tj) | — |
| Package Type | PG-TDSON-8 (Surface Mount) | — |
| Gaya Mounting | Surface Mount, Tape & Reel | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| RoHS / Lead-Free Status | RoHS Compliant, Lead-Free | — |
| Bebas Halogen | Yes | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Alir Berlanjut (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Technology | — | OptiMOS 6 |
| Paket | — | PG-TDSON-8 FL |
| Tipe Mounting | — | Surface Mount |
| Jumlah Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Suhu Kerja | — | -55 °C to +175 °C |
| Status RoHS | — | Compliant |