ISC008N06LM6ATMA1 vs ISC151N08NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC008N06LM6ATMA1 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC008N06LM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) at Ta | 44 A | — |
| Pulsed Drain Current (ID, pulse) at Tc | 378 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 221 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (1.0 V to 2.4 V typical) | — |
| Gambaran Suhu Operasi | -55 C to +175 C (Tj) | — |
| Package Type | PG-TDSON-8 (Surface Mount) | — |
| Gaya Pemasangan | Surface Mount, Tape & Reel | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| RoHS / Lead-Free Status | RoHS Compliant, Lead-Free | — |
| Boson Bebas | Yes | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Kumpal Tetap (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Technology | — | OptiMOS 6 |
| Kemasan | — | PG-TDSON-8 FL |
| Jenis Pemasangan | — | Surface Mount |
| Bilangan Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Suhu Operasi | — | -55 °C to +175 °C |
| Status RoHS | — | Compliant |