K4A8G085WB-BICR vs K4A8G085WB-BITD Perbandingan
Perbandingan bersamaan detil K4A8G085WB-BICR dari Samsung Electronics dan K4A8G085WB-BITD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WB-BICR | K4A8G085WB-BITD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 2400 Mbps | 2666 Mbps |
| Tegangan Pemuat | 1.2 V (VDD/VDDQ) | 1.2 V |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| Paket | 78-ball FBGA | 78FBGA |
| Jumlah Pin | 78 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Temperature Grade | Industrial (I-grade) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | — |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| Suhu Kerja | — | -40°C to +95°C |
| Jumlah Pin | — | 78 |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Row Cycle Time (tRC) | — | [DATA_NEEDED: tRC] |
| Refresh Cycle Time (tRFC) | — | [DATA_NEEDED: tRFC] |
| Antarmuka | — | Parallel |