K4A8G085WC-BCRC vs K4A8G085WC-BIWE Perbandingan
Perbandingan bersamaan detil K4A8G085WC-BCRC dari Samsung Electronics dan K4A8G085WC-BIWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WC-BCRC | K4A8G085WC-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Tegangan Pemuat | 1.2 V | — |
| Laju Data | 2400 Mbps (DDR4-2400) | 3200 Mbps |
| Paket | 78-ball FBGA (TFBGA) | 78-FBGA |
| Terminal Pitch | 0.8 mm | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +95C | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| Status RoHS | Compliant | Compliant |
| Refresh | Auto/Self refresh | Auto-refresh, self-refresh |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Rentang Suhu Kerja | — | -40°C to +95°C |
| Antarmuka | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 (CL22) |
| Lead-Free | — | Yes |