K4A8G165WB-BIWE vs AS4C512M16D4A-62BIN Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BIWE dari Samsung Electronics dan AS4C512M16D4A-62BIN dari Alliance Memory. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BIWE | AS4C512M16D4A-62BIN |
|---|---|---|
| Merek | Samsung Electronics | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Laju Data | 3200 Mbps | 3200 Mbps per pin |
| Tegangan Pemuat | 1.2 V | 1.14V ~ 1.26V (nominal 1.2V) |
| Suhu Kerja | -40°C to +95°C | -40°C to +95°C |
| Paket | 96-ball FBGA | 96-FBGA (7.5x13mm) |
| Antarmuka | Parallel | POD (Pseudo Open Drain) |
| Burst Length | 8, 16 | 8 (with burst chop 4) |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | Programmable (e.g., 22 cycles) |
| Refresh | Auto-refresh, Self-refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes | — |
| RoHS | Compliant | Compliant |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 96 | — |
| Ukuran Memori | — | 8 Gbit |
| Clock Rate | — | 1600 MHz |
| Lead Free | — | Yes |