K4A8G165WB-BIWE vs K4A8G165WB-BCRC Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BIWE dari Samsung Electronics dan K4A8G165WB-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BIWE | K4A8G165WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Laju Data | 3200 Mbps | 2400 Mbps/pin (DDR4-2400) |
| Tegangan Pemuat | 1.2 V | — |
| Suhu Kerja | -40°C to +95°C | -40C to +95C |
| Paket | 96-ball FBGA | 96-ball FBGA (PBGA96) |
| Antarmuka | Parallel | Parallel (DDR4 SDRAM bus) |
| Burst Length | 8, 16 | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh | Auto-refresh, Self-refresh | — |
| On-Die Termination | Yes | — |
| RoHS | Compliant | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 96 | — |
| Ukuran Memori | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |