K4A8G165WB-BIWE vs K4A8G165WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BIWE disebabkan oleh Samsung Electronics dan K4A8G165WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BIWE | K4A8G165WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Kadar Data | 3200 Mbps | 2400 Mbps/pin (DDR4-2400) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | -40°C to +95°C | -40C to +95C |
| Kemasan | 96-ball FBGA | 96-ball FBGA (PBGA96) |
| Antaramuka | Parallel | Parallel (DDR4 SDRAM bus) |
| Burst Length | 8, 16 | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh | Auto-refresh, Self-refresh | — |
| On-Die Termination | Yes | — |
| RoHS | Compliant | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 96 | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |