K4RAH086VP-BCWM vs K4RBH086VB-BCQK Perbandingan
Perbandingan bersamaan detil K4RAH086VP-BCWM dari Samsung Electronics dan K4RBH086VB-BCQK dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4RAH086VP-BCWM | K4RBH086VB-BCQK |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Ukuran Memori | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Laju Data | 5600 Mbps/pin | 4800 Mbps |
| Tegangan Pemuat | 1.1 V | — |
| Antarmuka | Parallel | DDR5 (CA bus, ODECC) |
| Technology | DRAM DDR5 | — |
| Memory Format | DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Paket | [DATA_NEEDED: exact FBGA package code and body size] | FBGA-82 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tray | [DATA_NEEDED: tray or tape and reel standard quantity] |
| Application Segment | Industrial | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status Lingkungan Hidup | Active | — |
| Status RoHS | unknown | Compliant |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Density | — | 16 Gb |
| Organisasi | — | 2G x 8 |
| Supply Voltage (VDD) | — | 1.1 V |
| On-die ECC | — | Yes |
| Refresh | — | [DATA_NEEDED: refresh rate 32ms/64ms] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |