K4RAH086VP-BCWM vs K4RBH086VB-BCQK Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RAH086VP-BCWM disebabkan oleh Samsung Electronics dan K4RBH086VB-BCQK disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4RAH086VP-BCWM K4RAH086VP-BCWM - 16Gb DDR5 5600Mbps DRAM | Samsung

K4RAH086VP-BCWM - 16Gb DDR5 5600Mbps DRAM | Samsung

K4RAH086VP-BCWM ✓ Aktif
Samsung Electronics
K4RBH086VB-BCQK K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH086VB-BCQK ✓ Aktif

Pengandingan Spesifikasi

Parametr K4RAH086VP-BCWM K4RBH086VB-BCQK
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR5 SDRAM DDR5 SDRAM
Saiz Ingatan 16 Gb —
Memory Organization 2G x 8 —
Kadar Data 5600 Mbps/pin 4800 Mbps
Tegangan Pemberi Arus 1.1 V —
Antaramuka Parallel DDR5 (CA bus, ODECC)
Technology DRAM DDR5 —
Memory Format DRAM —
Volatile / Non-Volatile Volatile —
Kemasan [DATA_NEEDED: exact FBGA package code and body size] FBGA-82
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tray [DATA_NEEDED: tray or tape and reel standard quantity]
Application Segment Industrial —
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Status Lingkungan Hidup Active —
Status RoHS unknown Compliant
Aras MSL [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Density — 16 Gb
Organisasi — 2G x 8
Supply Voltage (VDD) — 1.1 V
On-die ECC — Yes
Refresh — [DATA_NEEDED: refresh rate 32ms/64ms]
CAS Latency (CL) — [DATA_NEEDED: CAS latency at 4800 Mbps]
Power Supply Rails — VDD/VDDQ 1.1 V (PMIC on module)

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