K6X1008C2D-TF55 vs K6X1008C2D-BF55 Perbandingan
Perbandingan bersamaan detil K6X1008C2D-TF55 dari Samsung Electronics dan K6X1008C2D-BF55 dari Samsung Electro-Mechanics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Akhir HidupSamsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 ObsoletePerbandingan Spesifikasi
| Parameter Umum | K6X1008C2D-TF55 | K6X1008C2D-BF55 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Obsolete |
| Tipe Memori | SRAM - Asynchronous | Asynchronous CMOS Static RAM (SRAM) |
| Ukuran Memori | 1 Mbit | — |
| Organisasi | 128K x 8 | — |
| Access Time (tAA) | 55 ns | — |
| Antarmuka | Parallel | Parallel, asynchronous |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | — |
| Technology | Low Power Full CMOS | — |
| Paket | 32-TSOP REVERSE | 32-SOP-525 (SOP-32) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature grade] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | Volatile (SRAM) | — |
| Clock Frequency | N/A (asynchronous) | — |
| Status RoHS | RoHS: Yes (per distributor listing) | Compliant |
| Memory Organization | — | 128K x 8 bit (1 Mbit) |
| Density | — | 1 Mbit |
| Access Time | — | 55 ns |
| Supply Voltage (VCC) | — | 5 V (single supply) |
| Operating Current (ICC) | — | 30 mA typical |
| Standby Current (ICC2) | — | [DATA_NEEDED: standby current value] |
| Lebar Bus Data | — | 8 bit |
| Address Bus Width | — | 17 bit |
| Data Retention Voltage | — | Low data retention voltage supported |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes (Lead-Free variant) |
| Cell Technology | — | 6T CMOS memory cell |