K6X1008C2D-TF55 vs K6X1008C2D-BF55 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6X1008C2D-TF55 sa pamamagitan ng Samsung Electronics at K6X1008C2D-BF55 sa pamamagitan ng Samsung Electro-Mechanics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Tapus ng BuhaySamsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 ObsoletePagsanggunian na paghahambing
| Parametro | K6X1008C2D-TF55 | K6X1008C2D-BF55 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electro-Mechanics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Tapus ng Buhay | Obsolete |
| Uri ng Memory | SRAM - Asynchronous | Asynchronous CMOS Static RAM (SRAM) |
| Laki ng Memory | 1 Mbit | — |
| Organisasyon | 128K x 8 | — |
| Access Time (tAA) | 55 ns | — |
| Interface | Parallel | Parallel, asynchronous |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | — |
| Technology | Low Power Full CMOS | — |
| Packhaging | 32-TSOP REVERSE | 32-SOP-525 (SOP-32) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature grade] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | Volatile (SRAM) | — |
| Clock Frequency | N/A (asynchronous) | — |
| Tindminan RoHS | RoHS: Yes (per distributor listing) | Compliant |
| Memory Organization | — | 128K x 8 bit (1 Mbit) |
| Density | — | 1 Mbit |
| Access Time | — | 55 ns |
| Supply Voltage (VCC) | — | 5 V (single supply) |
| Operating Current (ICC) | — | 30 mA typical |
| Standby Current (ICC2) | — | [DATA_NEEDED: standby current value] |
| Width ng Data Bus | — | 8 bit |
| Address Bus Width | — | 17 bit |
| Data Retention Voltage | — | Low data retention voltage supported |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes (Lead-Free variant) |
| Cell Technology | — | 6T CMOS memory cell |