K6X1008C2D-TF55 vs K6X1008C2D-BF55 比較
詳細並排比較 K6X1008C2D-TF55 由 Samsung Electronics 與 K6X1008C2D-BF55 由 Samsung Electro-Mechanics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 Obsolete規格比較
| 參數 | K6X1008C2D-TF55 | K6X1008C2D-BF55 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electro-Mechanics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | Obsolete |
| 記憶體類型 | SRAM - Asynchronous | Asynchronous CMOS Static RAM (SRAM) |
| 記憶體容量 | 1 Mbit | — |
| 組織 | 128K x 8 | — |
| Access Time (tAA) | 55 ns | — |
| 介面 | Parallel | Parallel, asynchronous |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | — |
| Technology | Low Power Full CMOS | — |
| 封裝 | 32-TSOP REVERSE | 32-SOP-525 (SOP-32) |
| 安裝類型 | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature grade] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | Volatile (SRAM) | — |
| Clock Frequency | N/A (asynchronous) | — |
| RoHS 狀態 | RoHS: Yes (per distributor listing) | Compliant |
| Memory Organization | — | 128K x 8 bit (1 Mbit) |
| Density | — | 1 Mbit |
| Access Time | — | 55 ns |
| Supply Voltage (VCC) | — | 5 V (single supply) |
| Operating Current (ICC) | — | 30 mA typical |
| Standby Current (ICC2) | — | [DATA_NEEDED: standby current value] |
| 資料匯流排寬度 | — | 8 bit |
| Address Bus Width | — | 17 bit |
| Data Retention Voltage | — | Low data retention voltage supported |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes (Lead-Free variant) |
| Cell Technology | — | 6T CMOS memory cell |