M29F800FB55N3F2 vs M29F800FT55M3E2 Perbandingan

Perbandingan bersamaan detil M29F800FB55N3F2 dari Micron Technology dan M29F800FT55M3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ Aktif
Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F800FB55N3F2 M29F800FT55M3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs EEPROM
Status Lingkungan Hidup Aktif Aktif
Memory Density 8389 kbits (8 Mbit) —
Organisasi 1M x 8 / 512K x 16 512K x 16 bit
Tegangan Pemuat 5 V 5 V
Access Time 55 ns 55 ns
Tipe Antarmuka Parallel NOR —
Boot Block Architecture Bottom Boot Block —
Program/Erase Controller Embedded byte/word program algorithms —
Suhu Kerja -40C to +125C -40C to +125C
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 —
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
Status RoHS Compliant (lead-free terminations) Compliant (E suffix)
Tipe Memori — NOR Flash
Ukuran Memori — 8 Mbit
Antarmuka — Parallel
Boot Block Location — Top boot block
Program/Erase Cycles — 100,000 per block
Program Algorithm — Embedded byte/word program
Erase Features — Erase suspend and resume
Standby Mode — Automatic standby, low power
Identification — Electronic signature
Paket — 44-SO (SOP)
Density — 8389 kbits

Spek dan Sumber

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