M29F800FB55N3F2 vs M29F800FT55M3E2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FB55N3F2 disebabkan oleh Micron Technology dan M29F800FT55M3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ AktifMicron Technology
M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron
M29F800FT55M3E2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F800FB55N3F2 | M29F800FT55M3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 8389 kbits (8 Mbit) | — |
| Organisasi | 1M x 8 / 512K x 16 | 512K x 16 bit |
| Tegangan Pemberi Arus | 5 V | 5 V |
| Access Time | 55 ns | 55 ns |
| Jenis Antaramuka | Parallel NOR | — |
| Boot Block Architecture | Bottom Boot Block | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Temperature Grade | Automotive (AEC-Q100) | — |
| Package Type | 48-pin TSOP1 | — |
| Package Shape | Rectangular (JESD designation TSOP1) | — |
| Terminal Count | 48 | — |
| JESD-609 Termination Code | e3 (lead-free) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| Status RoHS | Compliant (lead-free terminations) | Compliant (E suffix) |
| Jenis Ingatan | — | NOR Flash |
| Saiz Ingatan | — | 8 Mbit |
| Antaramuka | — | Parallel |
| Boot Block Location | — | Top boot block |
| Program/Erase Cycles | — | 100,000 per block |
| Program Algorithm | — | Embedded byte/word program |
| Erase Features | — | Erase suspend and resume |
| Standby Mode | — | Automatic standby, low power |
| Identification | — | Electronic signature |
| Kemasan | — | 44-SO (SOP) |
| Density | — | 8389 kbits |