M29F800FT55N3F2 vs M29F160FT55N3F2 Perbandingan
Perbandingan bersamaan detil M29F800FT55N3F2 dari Micron Technology dan M29F160FT55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology
M29F160FT55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F800FT55N3F2 | M29F160FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash, Parallel | NOR Flash (Parallel, Asynchronous) |
| Ukuran Memori | 8 Mbit | — |
| Organisasi | 1M x 8 bit / 512K x 16 bit | 1M x 16 / 2M x 8 |
| Tegangan Pemuat | 5 V (single supply) | — |
| Access Time | 55 ns | 55 ns |
| Antarmuka | Parallel | Parallel |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Paket | 48-pin TSOP | 48-Pin TSOP |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Density | — | 16 Mbit (16777 kbits) |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 5 V (operating 4.5 V) |
| Synchronous / Asynchronous | — | Asynchronous |
| Boot Block Location | — | Top boot block (FT) |
| Program / Erase | — | Embedded byte/word program algorithms (controller on-chip) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |