M29F800FT55N3F2 vs M29F160FT55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FT55N3F2 disebabkan oleh Micron Technology dan M29F160FT55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology
M29F160FT55N3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F800FT55N3F2 | M29F160FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash, Parallel | NOR Flash (Parallel, Asynchronous) |
| Saiz Ingatan | 8 Mbit | — |
| Organisasi | 1M x 8 bit / 512K x 16 bit | 1M x 16 / 2M x 8 |
| Tegangan Pemberi Arus | 5 V (single supply) | — |
| Access Time | 55 ns | 55 ns |
| Antaramuka | Parallel | Parallel |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Kemasan | 48-pin TSOP | 48-Pin TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Density | — | 16 Mbit (16777 kbits) |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 5 V (operating 4.5 V) |
| Synchronous / Asynchronous | — | Asynchronous |
| Boot Block Location | — | Top boot block (FT) |
| Program / Erase | — | Embedded byte/word program algorithms (controller on-chip) |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |