MRF6V3090NR1 vs MRF6V3090NBR1 Perbandingan

Perbandingan bersamaan detil MRF6V3090NR1 dari NXP Semiconductors dan MRF6V3090NBR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRF6V3090NR1 MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 ✓ Aktif
NXP Semiconductors
MRF6V3090NBR1 MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP

MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP

MRF6V3090NBR1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MRF6V3090NR1 MRF6V3090NBR1
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Technology LDMOS (Laterally Diffused MOSFET) —
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 350 mA —
Frequency Range 470 MHz to 1215 MHz —
Test Frequency 860 MHz —
Output Power (CW, Pout) 90 W —
Power Gain (typical) 22 dB at 860 MHz —
Drain Efficiency (typical) [DATA_NEEDED: drain efficiency %] —
VSWR Tolerance 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW 10:1 all phase angles, 50 V, 860 MHz, 90 W CW
Input Power (Pin) [DATA_NEEDED: input drive level for 90 W Pout] —
Package Type TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) —
Tipe Mounting Surface Mount / Flange Mount with bolt-down heatsink Surface Mount / Screw-Mount Chassis
Suhu Hubung Kerja -40C to +200C (max TJ) —
Tahanan Panas [DATA_NEEDED: theta_JC value C/W] —
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] unknown
Reel Quantity (R1 suffix) 500 per reel (R1 = 500 unit reel) —
Application — RF Power Amplifier
Frequency Band — 470 MHz to 1215 MHz
Typical Output Power (CW) — 90 W at 860 MHz, 50 V
Power Gain — 22 dB at 860 MHz, 90 W CW
Drain Supply Voltage (Vdd) — 50 V DC
Drain Current (Id) — 350 mA (test condition)
Paket / Case — TO-272 WB-4 (ceramic)
Configuration — Single N-Channel MOSFET
Channel Mode — Enhancement-mode
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Tahanan Panas Soldering ke Case — [DATA_NEEDED: theta_jc]
Lead-Free — unknown
Qualification — Not Qualified (per partstack listing)

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