MRF6V3090NR1 vs MRF6V3090NBR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6V3090NR1 tarafından NXP Semiconductors ve MRF6V3090NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRF6V3090NR1 | MRF6V3090NBR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 350 mA | — |
| Frequency Range | 470 MHz to 1215 MHz | — |
| Test Frequency | 860 MHz | — |
| Output Power (CW, Pout) | 90 W | — |
| Power Gain (typical) | 22 dB at 860 MHz | — |
| Drain Efficiency (typical) | [DATA_NEEDED: drain efficiency %] | — |
| VSWR Tolerance | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW | 10:1 all phase angles, 50 V, 860 MHz, 90 W CW |
| Input Power (Pin) | [DATA_NEEDED: input drive level for 90 W Pout] | — |
| Package Type | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) | — |
| Montaj Türü | Surface Mount / Flange Mount with bolt-down heatsink | Surface Mount / Screw-Mount Chassis |
| İşletim Jant Sıcaklığı | -40C to +200C (max TJ) | — |
| Termal Direnç | [DATA_NEEDED: theta_JC value C/W] | — |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | — |
| RoHS Durumu | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] | unknown |
| Reel Quantity (R1 suffix) | 500 per reel (R1 = 500 unit reel) | — |
| Application | — | RF Power Amplifier |
| Frequency Band | — | 470 MHz to 1215 MHz |
| Typical Output Power (CW) | — | 90 W at 860 MHz, 50 V |
| Power Gain | — | 22 dB at 860 MHz, 90 W CW |
| Drain Supply Voltage (Vdd) | — | 50 V DC |
| Drain Current (Id) | — | 350 mA (test condition) |
| Paket / Kas | — | TO-272 WB-4 (ceramic) |
| Configuration | — | Single N-Channel MOSFET |
| Channel Mode | — | Enhancement-mode |
| İşletim Sıcaklığı Aralığı | — | [DATA_NEEDED: operating temperature range] |
| Düğüm-Case Termal Direncilik | — | [DATA_NEEDED: theta_jc] |
| Lead-Free | — | unknown |
| Qualification | — | Not Qualified (per partstack listing) |