MRF6V3090NR1 vs MRF6V3090NBR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6V3090NR1 sa pamamagitan ng NXP Semiconductors at MRF6V3090NBR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MRF6V3090NR1 | MRF6V3090NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 350 mA | — |
| Frequency Range | 470 MHz to 1215 MHz | — |
| Test Frequency | 860 MHz | — |
| Output Power (CW, Pout) | 90 W | — |
| Power Gain (typical) | 22 dB at 860 MHz | — |
| Drain Efficiency (typical) | [DATA_NEEDED: drain efficiency %] | — |
| VSWR Tolerance | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW | 10:1 all phase angles, 50 V, 860 MHz, 90 W CW |
| Input Power (Pin) | [DATA_NEEDED: input drive level for 90 W Pout] | — |
| Package Type | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) | — |
| Uri ng Pagpapasok | Surface Mount / Flange Mount with bolt-down heatsink | Surface Mount / Screw-Mount Chassis |
| Temperature ng Junction na Operasyon | -40C to +200C (max TJ) | — |
| Thermal Resistance | [DATA_NEEDED: theta_JC value C/W] | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] | unknown |
| Reel Quantity (R1 suffix) | 500 per reel (R1 = 500 unit reel) | — |
| Application | — | RF Power Amplifier |
| Frequency Band | — | 470 MHz to 1215 MHz |
| Typical Output Power (CW) | — | 90 W at 860 MHz, 50 V |
| Power Gain | — | 22 dB at 860 MHz, 90 W CW |
| Drain Supply Voltage (Vdd) | — | 50 V DC |
| Drain Current (Id) | — | 350 mA (test condition) |
| Packhaging / Kaso | — | TO-272 WB-4 (ceramic) |
| Configuration | — | Single N-Channel MOSFET |
| Channel Mode | — | Enhancement-mode |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Thermal Resistance ng Junction-to-Case | — | [DATA_NEEDED: theta_jc] |
| Lead-Free | — | unknown |
| Qualification | — | Not Qualified (per partstack listing) |