MRFG35010NR5 vs MRFG35003NR5 Perbandingan

Perbandingan bersamaan detil MRFG35010NR5 dari NXP Semiconductors dan MRFG35003NR5 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete
NXP Semiconductors
MRFG35003NR5 MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 Obsolete

Perbandingan Spesifikasi

Parameter Umum MRFG35010NR5 MRFG35003NR5
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Obsolete Obsolete
Tipe Transistor pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz 3.55 GHz (test)
Operating Frequency Range Up to 3.6 GHz —
Gain 10 dB (typical at 3.55 GHz) —
Output Power (CW) 9 W —
Voltage - Rated 15 V —
Voltage - Test 12 V —
Current - Test 180 mA —
Current Rating 2.9 A —
Paket / Case PLD-1.5 PLD-1.5 (ceramic flange, bolt-down)
Supplier Device Package PLD-1.5 PLD-1.5
Tipe Mounting Surface Mount Chassis / flange mount with screws
Configuration Single, unmatched Single, unmatched die
Application WLL/MMDS/BWA/UMTS driver stages —
Status RoHS [DATA_NEEDED: rohs status] —
Lead Free Status [DATA_NEEDED: lead free status] Lead-free (per NXP product page)
Frequency Range — Up to 3.6 GHz
Drain-Source Rated Voltage — 15 V
Continuous Drain Current — 1.3 A
Test Drain Voltage — 12 V
Test Drain Current — 55 mA
Power Gain (typ) — 11.5 dB @ 3.55 GHz
Output Power — 3 W
Operating Class — Class AB linear
Packaging — Tape & Reel (R5 suffix)

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