MRFG35010NR5 vs MRFG35003NR5 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRFG35010NR5 sa pamamagitan ng NXP Semiconductors at MRFG35003NR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete
NXP Semiconductors
MRFG35003NR5 MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 Obsolete

Pagsanggunian na paghahambing

Parametro MRFG35010NR5 MRFG35003NR5
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Obsolete Obsolete
Uri ng Transistor pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz 3.55 GHz (test)
Operating Frequency Range Up to 3.6 GHz —
Gain 10 dB (typical at 3.55 GHz) —
Output Power (CW) 9 W —
Voltage - Rated 15 V —
Voltage - Test 12 V —
Current - Test 180 mA —
Current Rating 2.9 A —
Packhaging / Kaso PLD-1.5 PLD-1.5 (ceramic flange, bolt-down)
Supplier Device Package PLD-1.5 PLD-1.5
Uri ng Pagpapasok Surface Mount Chassis / flange mount with screws
Configuration Single, unmatched Single, unmatched die
Application WLL/MMDS/BWA/UMTS driver stages —
Tindminan RoHS [DATA_NEEDED: rohs status] —
Lead Free Status [DATA_NEEDED: lead free status] Lead-free (per NXP product page)
Frequency Range — Up to 3.6 GHz
Drain-Source Rated Voltage — 15 V
Continuous Drain Current — 1.3 A
Test Drain Voltage — 12 V
Test Drain Current — 55 mA
Power Gain (typ) — 11.5 dB @ 3.55 GHz
Output Power — 3 W
Operating Class — Class AB linear
Packaging — Tape & Reel (R5 suffix)

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