MRFG35010NR5 vs MRFG35003NR5 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRFG35010NR5 tarafından NXP Semiconductors ve MRFG35003NR5 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete
NXP Semiconductors
MRFG35003NR5 MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 Obsolete

Özellik Karşılaştırması

Parametre MRFG35010NR5 MRFG35003NR5
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Obsolete Obsolete
Transistor Türü pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz 3.55 GHz (test)
Operating Frequency Range Up to 3.6 GHz —
Gain 10 dB (typical at 3.55 GHz) —
Output Power (CW) 9 W —
Voltage - Rated 15 V —
Voltage - Test 12 V —
Current - Test 180 mA —
Current Rating 2.9 A —
Paket / Kas PLD-1.5 PLD-1.5 (ceramic flange, bolt-down)
Supplier Device Package PLD-1.5 PLD-1.5
Montaj Türü Surface Mount Chassis / flange mount with screws
Configuration Single, unmatched Single, unmatched die
Application WLL/MMDS/BWA/UMTS driver stages —
RoHS Durumu [DATA_NEEDED: rohs status] —
Lead Free Status [DATA_NEEDED: lead free status] Lead-free (per NXP product page)
Frequency Range — Up to 3.6 GHz
Drain-Source Rated Voltage — 15 V
Continuous Drain Current — 1.3 A
Test Drain Voltage — 12 V
Test Drain Current — 55 mA
Power Gain (typ) — 11.5 dB @ 3.55 GHz
Output Power — 3 W
Operating Class — Class AB linear
Packaging — Tape & Reel (R5 suffix)

Dökümanlar & Kaynaklar

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