MT40A512M16LY-075:E vs K4A8G165WB-BCWE 比較
詳細並排比較 MT40A512M16LY-075:E 由 Micron Technology 與 K4A8G165WB-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A512M16LY-075:E | K4A8G165WB-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $6.25 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit (512M x 16) | 8 Gb |
| 資料速率 | 2666 MT/s | 3200 Mbps/pin |
| Clock Frequency | 1.33 GHz | — |
| CAS 延遲 | 19 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| 介面 | Parallel | Parallel |
| 封裝 | 96-FBGA (7.5x13.5mm) | 96FBGA |
| 工作溫度範圍 | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Internal Banks (x16) | 8 banks (4 groups of 2) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| RoHS | Compliant | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Organization | — | 512M x 16 |
| 供應電壓 | — | 1.2 V |
| Access Time | — | 19 ns |
| 工作溫度 | — | 0C to +85C |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |