MT41K256M16HA-125 vs H5TC4G63MFR-PBA Perbandingan

Perbandingan bersamaan detil MT41K256M16HA-125 dari Micron Technology dan H5TC4G63MFR-PBA dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
MT41K256M16HA-125 MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 ✓ Aktif
SK hynix
H5TC4G63MFR-PBA H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MT41K256M16HA-125 H5TC4G63MFR-PBA
Merek Micron Technology SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $6,36 —
Tipe Memori SDRAM - DDR3L DDR3L SDRAM
Ukuran Memori 4Gbit (256M x 16) —
Lebar Bus Data 16 bit —
Clock Frequency 800 MHz —
Access Time 13.75 ns —
Tegangan Pemuat 1.35 V —
Paket 96-FBGA (9x14 mm) 96-ball FBGA
Jumlah Pin 96 —
Tipe Mounting Surface Mount —
Suhu Kerja [DATA_NEEDED: operating temperature range] —
Status RoHS Compliant —
Lead-Free Yes —
Logic Family CMOS —
Refresh Interval 7.8 us at 85C —
Latensi CAS 11 —
Density — 4 Gb
Organisasi — 256M x 16
Supply Voltage (VDD/VDDQ) — 1.35V (+0.100V/-0.067V)
Laju Data — 1866 Mbps (PC3L-14900)
Number of Banks — 8
Burst Length — BL8, BL4 (with burst chop)
CAS Latency (CL) — Programmable
CAS Write Latency (CWL) — Programmable
Additive Latency — Programmable
On-Die Termination (ODT) — Yes
ZQ Calibration — Yes
Write Leveling — Yes
Auto Self-Refresh — Yes
Temperature-Compensated Self-Refresh — Yes
Process Technology — 30nm-class
RoHS Compliant — Yes (Lead-Free & Halogen-Free)

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