MT41K256M16HA-125 vs H5TC4G63MFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K256M16HA-125 sa pamamagitan ng Micron Technology at H5TC4G63MFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MT41K256M16HA-125 | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $6.36 | — |
| Uri ng Memory | SDRAM - DDR3L | DDR3L SDRAM |
| Laki ng Memory | 4Gbit (256M x 16) | — |
| Width ng Data Bus | 16 bit | — |
| Clock Frequency | 800 MHz | — |
| Access Time | 13.75 ns | — |
| Volte ng Pagbibigay | 1.35 V | — |
| Packhaging | 96-FBGA (9x14 mm) | 96-ball FBGA |
| Bilang ng Pins | 96 | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Logic Family | CMOS | — |
| Refresh Interval | 7.8 us at 85C | — |
| Latensya ng CAS | 11 | — |
| Density | — | 4 Gb |
| Organisasyon | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Rate ng Data | — | 1866 Mbps (PC3L-14900) |
| Number of Banks | — | 8 |
| Burst Length | — | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |