UCC21550BDWR vs UCC21521DWR Perbandingan

Perbandingan bersamaan detil UCC21550BDWR dari Texas Instruments dan UCC21521DWR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum UCC21550BDWR UCC21521DWR
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Konfigurasi Output Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Voltage 5000 Vrms —
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) —
Programmable Dead Time Yes —
Disable Function Yes —
Junction Temperature Range -40 C to +150 C —
Paket 16-SOIC (DW) SOIC-16 (DW)
Tipe Mounting Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Channel Count — 2
Isolation Rating — 5700 Vrms
CMTI — 100 V/ns (minimum)
Propagation Delay — 19 ns (typical)
Delay Matching — 5 ns (maximum)
Pulse-Width Distortion — 6 ns (maximum)
Minimum Pulse Width — 10 ns
Max Switching Frequency — 5 MHz
Isolation Technology — Capacitive coupling
Input Threshold — TTL and CMOS compatible (3.3 V logic)
Enable / Disable Pin — Yes (DIS)
Suhu Kerja — -40C to +125C
Configurations — Dual low-side, dual high-side, or half-bridge

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon