UCC21550BDWR vs UCC21521DWR 比較

詳細並排比較 UCC21550BDWR 由 Texas Instruments 與 UCC21521DWR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21550BDWR UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR ✓ 啟用中
Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ 啟用中

規格比較

參數 UCC21550BDWR UCC21521DWR
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
輸出配置 Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Voltage 5000 Vrms —
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) —
Programmable Dead Time Yes —
Disable Function Yes —
Junction Temperature Range -40 C to +150 C —
封裝 16-SOIC (DW) SOIC-16 (DW)
安裝類型 Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
Channel Count — 2
Isolation Rating — 5700 Vrms
CMTI — 100 V/ns (minimum)
Propagation Delay — 19 ns (typical)
Delay Matching — 5 ns (maximum)
Pulse-Width Distortion — 6 ns (maximum)
Minimum Pulse Width — 10 ns
Max Switching Frequency — 5 MHz
Isolation Technology — Capacitive coupling
Input Threshold — TTL and CMOS compatible (3.3 V logic)
Enable / Disable Pin — Yes (DIS)
工作溫度 — -40C to +125C
Configurations — Dual low-side, dual high-side, or half-bridge

資料表與資源

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