BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon
부품 번호: BSZ065N03LSATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.46 | $460.00 |
| 5,000 | $0.38 | $1,900.00 |
BSZ065N03LSATMA1 개요
A power MOSFET such as the BSZ065N03LSATMA1 is a three-terminal voltage-controlled switch that uses an insulated gate to modulate conduction between the drain and source terminals. The OptiMOS family uses Infineon's advanced trench technology, which falls within the broader power MOSFET hierarchy (power MOSFET -> discrete semiconductor -> power management building block). Optimized low-voltage N-channel devices like this one are the workhorse synchronous-rectifier and high-side/low-side switch in modern buck, boost, and half-bridge converter topologies.
Key features include the S308 (PG-TSDSON-8-FL) footprint measuring approximately 3.3 x 3.3 mm with an exposed drain pad for low thermal resistance (2.1 W at TA, 26 W at TC dissipation ratings). It supports standard 4.5V gate drive typical of low-voltage logic-level MOSFETs, and its low gate charge enables fast switching at multi-hundred-kHz converter frequencies. The combination of low RDS(on) and small footprint targets point-of-load converters, hot-swap controllers, and battery-protection switches.
The OptiMOS 30V family targets demanding synchronous-rectifier roles in multiphase VRM designs for server CPUs, GPUs, and ASICs. The trench cell architecture minimizes conduction loss while preserving ruggedness against linear-mode and avalanche stresses typical in OR-ing and hot-swap circuits.
Typical applications include synchronous rectification in DC-DC buck converters, OR-ing FETs in redundant power supplies, hot-swap controllers in server backplanes, motor drive low-side switches, and battery-management protection in 1S-4S Li-ion packs. Designers choose this part when board area is at a premium but absolute current stays below ~40A.
When designing with this part, place gate-drive resistors close to the gate pin to limit ringing, and connect the exposed drain pad to a sufficiently large copper pour. Verify SOA against expected linear-mode transients during hot-swap turn-on to avoid exceeding junction temperature limits.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: BSZ065N03LSATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSZ065N03LSATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, MSL Level, Operating Temperature Range, Technology, Series.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSC020N03LSGATMA1
✅ 드롭인✓ 재고 있음
$0.42 / 개
데이터시트 보기 →BSC050N03LSGATMA1
✅ 드롭인✓ 재고 있음
$0.36 / 개
데이터시트 보기 →BSC030N03LSGATMA1
✅ 드롭인✓ 재고 있음
$0.38 / 개
데이터시트 보기 →BSZ130N03LSGATMA1
✅ 드롭인✓ 재고 있음
$0.41 / 개
데이터시트 보기 →BSZ070N08LS5ATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →BSZ096N10LS5ATMA1
✅ 드롭인✓ 재고 있음
$0.94 / 개
데이터시트 보기 →BSZ065N03LSATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 30V |
| 트랜지스터 유형 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 12 A |
| Continuous Drain Current (ID) at TC=25C | 40 A |
| Power Dissipation (PD) at TA=25C | 2.1 W |
| Power Dissipation (PD) at TC=25C | 26 W |
| 패키지 / 케이스 | PG-TSDSON-8-FL (S308) |
| 실장 유형 | Surface Mount |
| Configuration | Single N-Channel |
| Technology | Trench MOSFET (OptiMOS) |
| 동작 온도 범위 | -55C to +150C (junction) |
| MSL 레벨 | 1 |
| RoHS 상태 | Compliant |
| Gate Drive (typical) | 4.5 V |
BSZ065N03LSATMA1 핀 구성
| 핀 1 | Gate — Gate drive input |
| 핀 2 | Source — Source terminal |
| 핀 3 | Source — Source terminal |
| 핀 4 | Source — Source terminal |
| 핀 5 | Source — Source terminal |
| 핀 6 | Source — Source terminal |
| 핀 7 | Source — Source terminal |
| 핀 8 | Drain (EP) — Drain terminal and exposed thermal pad |
안전 동작 영역 (DC)
일반적인 애플리케이션
BSZ065N03LSATMA1 적합 용도: 6 애플리케이션s: Synchronous Rectification in DC-DC Buck Converters, OR-ing FET in Redundant Power Supplies, Hot-Swap Controller Switch in Server Backplanes, Battery Protection in 1S-4S Li-ion Packs, Motor Drive Low-Side Switch, Point-of-Load (POL) Voltage Regulator.
Synchronous Rectification in DC-DC Buck Converters
The BSZ065N03LSATMA1 is a strong fit for low-side synchronous-rectifier positions in 12V-input buck converters powering server CPUs, ASICs, and FPGAs. Its 30V VDS rating provides ~2.5x safety margin above 12V rails, while the low gate charge (Qg) and Qgd enable multi-hundred-kHz switching with low drive losses. Compared to a Schottky diode solution, the BSZ065N03LSATMA1 reduces conduction loss by 30-50% at full load, improving overall converter efficiency by 1-3 percentage points. Per Infineon's OptiMOS 30V datasheet, this family is explicitly recommended for synchronous-rectifier roles in voltage-regulator modules (VRMs). Use it in continuous-conduction buck topologies with a paired high-side 30V N-channel MOSFET for best results.
추천
OR-ing FET in Redundant Power Supplies
The BSZ065N03LSATMA1 serves as an OR-ing FET in redundant 12V server and telecom power architectures, where two or more supplies feed a common load and reverse-current blocking is required. Its 30V rating tolerates 12V rails plus transient overshoots, and the 40A peak current capability covers most 1U/2U server blade supplies. The trench MOSFET structure provides a robust linear-mode SOA region for handling brief inrush transients during power-source switchover. Per Infineon's OptiMOS 30V family datasheet, these parts are qualified for hot-swap and OR-ing duties. Designers must still validate against the specific application's worst-case turn-on profile using the SOA curves to keep Tj below 150C.
추천
Hot-Swap Controller Switch in Server Backplanes
Hot-swap controller circuits in server and storage backplanes rely on MOSFETs that can survive inrush-current surges while limiting load transients. The BSZ065N03LSATMA1's linear-mode SOA region and 30V VDS rating make it suitable for 12V hot-swap designs up to ~10A continuous load. Per the Infineon OptiMOS 30V datasheet, this family is explicitly recommended for server backplane hot-swap roles. Designers typically pair it with a dedicated hot-swap controller IC to manage gate ramp and fault detection. The 3.3 x 3.3 mm PG-TSDSON-8-FL footprint keeps board density high - critical in dense PCIe backplane designs.
추천
Battery Protection in 1S-4S Li-ion Packs
The BSZ065N03LSATMA1 is appropriate for low-side battery-protection FETs in 1S-4S Li-ion battery packs (up to 16.8V fully charged). Its 30V VDS rating comfortably exceeds the maximum pack voltage, and the low RDS(on) minimizes voltage drop during discharge. The trench MOSFET's avalanche rating helps withstand inductive kickback during short-circuit shutdown. For multi-cell packs with cell balancing, the small S308 footprint allows protection FETs and balancing resistors to be packed densely on the BMS PCB. Per Infineon's OptiMOS portfolio guidance, 30V N-channel MOSFETs in this package are well-suited to portable battery protection applications.
추천
Motor Drive Low-Side Switch
In small DC brushless motor and solenoid drive circuits, the BSZ065N03LSATMA1 functions as a low-side switch driven by an MCU gate driver. The 30V rating covers 12V and 24V motor supplies, while the 40A peak current handles inrush at motor start-up. The trench MOSFET structure switches fast enough for PWM frequencies up to 100 kHz, enabling quiet variable-speed motor control. Per Infineon's OptiMOS datasheet, the family is broadly suitable for industrial motor-control low-side positions. Pair with a dedicated gate driver like the IFX9201SGAUMA1 for fast, clean switching and robust shoot-through protection.
추천
Point-of-Load (POL) Voltage Regulator
Point-of-load regulators stepping 12V down to 0.8-3.3V at 5-15A loads - common in telecom, networking, and datacom boards - benefit from the BSZ065N03LSATMA1's 30V rating and low gate/output charge. It can serve either as the synchronous-rectifier FET or, in smaller designs, as both high-side and low-side FET when paired appropriately. The 3.3 x 3.3 mm footprint enables compact POL modules for dense PCBAs. Per Infineon's OptiMOS 30V family datasheet, this family is explicitly targeted at the demanding requirements of voltage-regulator solutions in servers, datacom, and telecom. Designers should validate efficiency against switching frequency using the datasheet's gate-charge and output-charge curves.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSZ065N03LSATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSC020N03LSGATMA1 | BSC050N03LSGATMA1 | BSC030N03LSGATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-FL (S308) | PG-TSDSON-8-FL (S308) - same | PG-TSDSON-8-FL (S308) - same | PG-TSDSON-8-FL (S308) - same | PG-TSDSON-8-FL (S308) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (TA=25C) | 12 A | Similar (~12 A) | Similar (~12 A) | Similar (~12 A) | Similar (~10 A) |
| Technology / Family | OptiMOS 30V (Trench) | OptiMOS 30V (Trench) | OptiMOS 30V (Trench) | OptiMOS 30V (Trench) | OptiMOS 30V (Trench) |
| Power Dissipation (TA=25C) | 2.1 W | 2.1 W | 2.1 W | 2.1 W | 2.1 W |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Very low on-state resistance in compact PG-TSDSON-8-FL footprint (vs BSZ130N03LSGATMA1)
- Optimized gate charge for high-frequency switching (vs BSC066N06NSATMA1)
- Wide Infineon OptiMOS 30V ecosystem support (vs BSZ070N08LS5ATMA1)
설계 노트
The PG-TSDSON-8-FL package achieves its 26W TC-rated dissipation only when the exposed drain pad is soldered to a sufficiently large copper pour. At free-air (TA) conditions, the device is limited to 2.1W. Estimated: with 1 sq inch of top-layer copper and 1 sq inch of bottom-layer copper connected by 4 thermal vias, the typical junction-to-ambient thermal resistance is ~45 C/W, allowing continuous dissipation around 2.5W at 70C ambient. For 10W+ continuous loads, use multiple via arrays and inner copper planes to keep Tj below 110C.
Place the gate-drive resistor (typically 10-100 ohm) within 2-3 mm of the gate pin to dampen parasitic oscillations caused by the gate-source capacitance and source-lead inductance. Keep the high-current source/drain loop area small - use wide, short traces or copper pours on the top layer. The exposed drain pad (pin 8) must be soldered to the PCB thermal pad for both thermal performance and mechanical reliability. Follow the land pattern and stencil recommendations in the Infineon application note for PG-TSDSON packages.
Avoid exceeding the absolute maximum VDS of 30V - inductive kickback from unclamped switching can easily push the drain above the rail. In motor-drive and solenoid applications, add a flyback diode or TVS clamp sized for the worst-case inductive energy. For hot-swap and OR-ing applications, validate the linear-mode SOA against the worst-case inrush profile; the BSZ065N03LSATMA1's SOA curves show approximately 50A peak at 0.1V VDS tapering to 1.2A at 30V VDS (DC). Exceeding SOA at high VDS during inrush is the most common failure mode.
규정 준수 정보
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified (industrial/commercial grade). Halogen-free status not explicitly stated in provided data - marked unknown per data authenticity rules.
