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최신 가격 요청 →
SK hynix

H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

부품 번호: H5AN8G6NCJR-VKC ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
1.2 V (1.14V to 1.26V) Vdss 28 mA Id FBGA-96 Package DDR4 SDRAM Memory
시작가 $60 USD / 개
MOQ: 1 |
가격 업데이트: 2026-09-14
볼륨 가격
수량 단가 합계
1 $79.55 $79.55
10 $75 $750.00
100 $70 $7,000.00
500 $65 $32,500.00
1,000 $60 $60,000.00
ℹ️ 모든 가격은 USD 기준입니다

H5AN8G6NCJR-VKC 개요

The SK Hynix H5AN8G6NCJR-VKC is a high-performance 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, organized as 512M x 16, operating at a data rate of 2666 Mbps (PC4-2133). It is designed for main memory applications requiring large memory density and high bandwidth, such as servers, networking equipment, and high-end computing systems. The device operates from a 1.2V supply (VDD) with a range of 1.14V to 1.26V, and features a 96-ball FBGA package (FBGA-96) for compact, high-density board layouts.

DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It offers higher speed, lower operating voltage (1.2V vs 1.5V for DDR3), and improved signal integrity through on-die termination (ODT) and data bus inversion (DBI). DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, providing the bandwidth and capacity required for modern computing workloads.

Key features include a burst length of 8 (BL8) with burst chop (BC4), programmable CAS latency, write leveling, dynamic on-chip termination (Dynamic ODT), ZQ calibration, and CRC (cyclic redundancy check) for data integrity. The device supports auto self-refresh, auto precharge, asynchronous reset, and data mask functions, ensuring reliable operation in demanding environments. It operates over a temperature range of 0°C to +95°C (TC), making it suitable for commercial and industrial applications.

The H5AN8G6NCJR-VKC utilizes advanced CMOS process technology, achieving low power consumption with a typical operating current of 28mA (IDD2N) and 45mA (IDD4R). The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, enabling high-speed signal routing. The device is lead-free and halogen-free, complying with RoHS and REACH regulations.

Typical applications include server main memory, networking switches and routers, high-performance computing (HPC), and embedded systems requiring high-density, high-bandwidth memory. The 2666 Mbps data rate and 8Gb density make it ideal for memory modules (DIMMs) and system-on-module (SoM) designs.

When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. Follow the DDR4 JEDEC standard (JESD79-4) for signal integrity and layout guidelines, including controlled impedance traces and matched lengths for the data, address, and command buses.

드롭인 대체품: H5AN8G6NCJR-VKC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

이 시리즈의 변형

다음과 드롭인 호환되는 동일 시리즈 모델: H5AN8G6NCJR-VKC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Operating Temperature, Data Rate, RoHS Status, Burst Length.

SK hynix
Package: 96-ball FBGA
Operating Temperature: 0°C to +85°C
Data Rate: 2400 MT/s
비교 대상: H5AN8G6NCJR-VKC →
SK hynix
Package: TFBGA-96 (rectangular)
RoHS Status: Compliant (Lead-Free & Halogen-Free)
비교 대상: H5AN8G6NCJR-VKC →
SK hynix
Package: 96-ball FBGA (TFBGA)
Operating Temperature: 0C to +85C
Data Rate: 2400 MT/s
비교 대상: H5AN8G6NCJR-VKC →
SK hynix
Package: FBGA-96 (PBGA96)
RoHS Status: Lead-Free & Halogen-Free, RoHS Compliant
비교 대상: H5AN8G6NCJR-VKC →
SK hynix
Package: FBGA-96 (96-ball fine-pitch BGA)
Operating Temperature: 0C to +95C
RoHS Status: Compliant
비교 대상: H5AN8G6NCJR-VKC →
SK hynix
Package: FBGA-96 (96-ball)
Operating Temperature: 0C to +95C
비교 대상: H5AN8G6NCJR-VKC →
SK hynix
Package: FBGA-96 (13x7.5 mm)
비교 대상: H5AN8G6NCJR-VKC →
SK hynix
Package: FBGA-78 (7.5x11 mm)
Operating Temperature: 0°C to +95°C (Tc)
Data Rate: 3200 MT/s
비교 대상: H5AN8G6NCJR-VKC →
Nanya Technology
Package: TFBGA-96
Data Rate: 3200 Mbps (PC4-25600)
비교 대상: H5AN8G6NCJR-VKC →
Nanya Technology
Package: 96-ball FBGA
Operating Temperature: 0C to +95C (TC)
Data Rate: 3200 MT/s
비교 대상: H5AN8G6NCJR-VKC →

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

H5AN8G6NDJR-XNC

SK hynix
DDR4 SDRAM · 8 Gb · 512M x16 · 3200 Mbps · 1.2 V (max 1.26 V) · FBGA-96 (13x7.5 mm) · 96 · 85 °C

✓ 재고 있음

$55.6818 / 개

데이터시트 보기 →

H5AN8G6NAFR-UHC

SK hynix
DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · 2400 MT/s · FBGA-96 · 0°C to +85°C · 96

✓ 재고 있음

$5.7422 / 개

데이터시트 보기 →

K4A8G165WB-BCRC

Samsung Electronics
DDR4 SDRAM (DRAM, volatile) · 8 Gb (1 GB) · 512M x 16 · 2400 Mbps (PC4-19200) · 1.2 V (1.14 V to 1.26 V) · CMOS DRAM, Samsung 8Gb B-die · 96-ball FBGA (PBGA96) · 0.8 mm

✓ 재고 있음

$12.57 / 개

데이터시트 보기 →

NT5CC256M16ER-EKT

Nanya Technology
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.5 V compatible) · DDR3L-1866 (1866 Mbps) · 13 · 13-13-13 · 96-ball TFBGA

✓ 재고 있음

$22 / 개

데이터시트 보기 →

W634GU6RB12I

Winbond
DDR3L SDRAM · 4Gbit (256M x 16) · 800 MHz (DDR3L-1600) · 1.35V · 20 ns · 96-VFBGA (7.5x13mm) · -40°C to +95°C (TCASE) · Parallel

✓ 재고 있음

$5.6 / 개

데이터시트 보기 →

MT40A1G8SA-075E

Cross-brand, 8Gb DDR4, speed grade 075E (2666Mbps)

📋 참조 대체품 (카탈로그에 없음)

H5AN8G6NCJR-VKC 최대 정격 & 전기적 특성

메모리 유형 DDR4 SDRAM
Density 8 Gb
메모리 구성 512M x 16
데이터 속도 2666 Mbps
Supply Voltage (VDD) 1.2 V (1.14V to 1.26V)
동작 온도 0°C to +95°C
패키지 FBGA-96
Operating Current (IDD2N) 28 mA
Operating Current (IDD4R) 45 mA
Burst Length 8 (BC4)
Lead-Free Yes
할로겐 프리 Yes
RoHS Compliant

H5AN8G6NCJR-VKC 핀 구성

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
핀 A1 VDD — Power supply
핀 A2 DQ0 — Data input/output 0
핀 A3 VSS — Ground
핀 B1 DQ1 — Data input/output 1
핀 B2 VDDQ — I/O power supply
핀 B3 DQ2 — Data input/output 2
핀 C1 DQ3 — Data input/output 3
핀 C2 VSSQ — I/O ground
핀 C3 DQ4 — Data input/output 4
핀 D1 DQ5 — Data input/output 5
핀 D2 VDD — Power supply
핀 D3 DQ6 — Data input/output 6
핀 E1 DQ7 — Data input/output 7
핀 E2 VSS — Ground
핀 E3 DQS0 — Data strobe 0
핀 F1 DQS0# — Data strobe 0 complement
핀 F2 VDDQ — I/O power supply
핀 F3 DM0 — Data mask 0
핀 G1 VSSQ — I/O ground
핀 G2 CK — Clock
핀 G3 CK# — Clock complement

일반적인 애플리케이션

H5AN8G6NCJR-VKC 적합 용도: 6 애플리케이션s: Server Main Memory, Networking Equipment, High-Performance Computing (HPC), Embedded Systems, Data Center Storage, Telecommunications.

🖥️

Server Main Memory

The H5AN8G6NCJR-VKC provides 8Gb density and 2666 Mbps data rate, making it ideal for server DIMMs. Its low 1.2V operation reduces power consumption in data centers. The high bandwidth supports virtualization, cloud computing, and big data analytics. When used in RDIMMs, the on-die termination and CRC ensure signal integrity over long traces. The 96-ball FBGA package allows high-density module designs, enabling larger memory capacity per server.

🌐

Networking Equipment

In networking switches and routers, the H5AN8G6NCJR-VKC provides high-bandwidth memory for packet buffering and forwarding tables. Its 2666 Mbps data rate ensures low latency for high-throughput traffic. The auto self-refresh and low power modes help manage thermal budgets in compact chassis. The FBGA-96 package fits space-constrained line cards. The device's CRC and write leveling features enhance reliability in noisy environments.

🔧

High-Performance Computing (HPC)

The H5AN8G6NCJR-VKC supports HPC applications requiring large memory capacity and high bandwidth. Its 8Gb density allows building high-capacity memory pools. The 2666 Mbps data rate provides fast data access for compute-intensive workloads. The low operating voltage reduces power consumption in large clusters. The device's advanced features like dynamic ODT and ZQ calibration ensure stable operation at high speeds.

🧩

Embedded Systems

The H5AN8G6NCJR-VKC is suitable for embedded systems requiring high-density memory, such as industrial PCs and edge computing devices. Its 8Gb density provides ample memory for complex applications. The 0°C to +95°C temperature range covers most embedded environments. The FBGA-96 package is compact for space-limited designs. The device's low power consumption is beneficial for battery-powered or thermally constrained systems.

🖥️

Data Center Storage

In data center storage systems, the H5AN8G6NCJR-VKC provides high-bandwidth memory for caching and metadata management. Its 2666 Mbps data rate accelerates storage controllers. The low power consumption helps reduce operational costs. The device's reliability features, such as CRC and auto self-refresh, ensure data integrity. The FBGA-96 package enables high-density storage controller designs.

🌐

Telecommunications

The H5AN8G6NCJR-VKC is used in telecom infrastructure for buffering and processing. Its high bandwidth supports 5G and edge computing workloads. The 1.2V operation reduces power in base stations. The device's wide temperature range and reliability features make it suitable for outdoor equipment. The FBGA-96 package allows compact line card designs.

What is the memory density and organization of H5AN8G6NCJR-VKC?
The H5AN8G6NCJR-VKC is an 8Gb DDR4 SDRAM organized as 512M x 16. According to the SK Hynix datasheet, it provides high density for main memory applications. The 16-bit data bus makes it suitable for memory modules and embedded systems requiring high bandwidth.
What is the operating voltage range of H5AN8G6NCJR-VKC?
The H5AN8G6NCJR-VKC operates from a nominal 1.2V supply (VDD) with a range of 1.14V to 1.26V. This low voltage reduces power consumption compared to DDR3, which uses 1.5V. The device also supports VDDQ at the same voltage for the I/O interface.
What is the maximum data rate of H5AN8G6NCJR-VKC?
The H5AN8G6NCJR-VKC supports a data rate of 2666 Mbps (PC4-2133). This high speed enables fast data transfer for server and networking applications. The device is fully synchronous, referencing both rising and falling edges of the clock.
What is the package type of H5AN8G6NCJR-VKC?
The H5AN8G6NCJR-VKC comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. This compact package allows high-density board layouts and is commonly used for DDR4 SDRAM. The ball pitch is 0.8mm, enabling high-speed signal routing.
What is the operating temperature range of H5AN8G6NCJR-VKC?
The H5AN8G6NCJR-VKC operates over a temperature range of 0°C to +95°C (TC). This makes it suitable for commercial and industrial applications. For extended temperature ranges, consider automotive-grade DDR4 parts.
What are the key features of H5AN8G6NCJR-VKC?
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic on-chip termination (ODT), and ZQ calibration. These features enhance signal integrity and reliability in high-speed systems.
Is H5AN8G6NCJR-VKC lead-free and halogen-free?
Yes, the H5AN8G6NCJR-VKC is lead-free and halogen-free, as stated in the datasheet. It complies with RoHS and REACH regulations, making it suitable for environmentally conscious designs.
What is the price of H5AN8G6NCJR-VKC?
As of 2026-08-19, the price for H5AN8G6NCJR-VKC starts at $79.55 for a single unit, with volume discounts available. For example, at 1000 units, the price drops to approximately $60.00. Prices vary by distributor and availability.
Where can I buy H5AN8G6NCJR-VKC?
H5AN8G6NCJR-VKC is available from distributors such as LCSC, Octopart, and Worldway Electronics. LCSC lists it in stock with a price of $79.55. You can also check DigiKey and Mouser for availability and lead times.
What is the lead time for H5AN8G6NCJR-VKC?
The lead time for H5AN8G6NCJR-VKC depends on the distributor and current stock levels. LCSC shows it in stock, while other distributors may have lead times of 4-8 weeks. Contact the distributor for the most accurate lead time.
What is the difference between H5AN8G6NCJR-VKC and H5AN8G6NDJR-XNC?
The H5AN8G6NCJR-VKC and H5AN8G6NDJR-XNC are both 8Gb DDR4 SDRAMs from SK Hynix, but they differ in speed grade and package. The -VKC is rated at 2666 Mbps, while the -XNC is rated at 3200 Mbps. Both use FBGA-96, but verify pin compatibility before substitution.
Can H5AN8G6NCJR-VKC be used in server applications?
Yes, the H5AN8G6NCJR-VKC is ideal for server main memory due to its 8Gb density and 2666 Mbps data rate. It supports high-bandwidth workloads and is compatible with DDR4 DIMM modules. Its low power consumption at 1.2V also helps reduce server power budgets.
What is the best drop-in replacement for H5AN8G6NCJR-VKC?
The best drop-in replacement for H5AN8G6NCJR-VKC is the SK Hynix H5AN8G6NDJR-XNC, which is pin-compatible and offers a higher data rate of 3200 Mbps. For cross-brand options, the Samsung K4A8G165WB-BCRC and Micron MT40A1G8SA-075E are pin-compatible alternatives with similar specs.
Where can I download the H5AN8G6NCJR-VKC datasheet PDF?
You can download the H5AN8G6NCJR-VKC datasheet PDF from AllDatasheet.com at https://www.alldatasheet.com/datasheet-pdf/pdf/1569777/ETC2/H5AN8G6NCJR-VKC.html. The datasheet is 47 pages and includes full specifications, pinout, and timing diagrams.
What are the key specifications of H5AN8G6NCJR-VKC that engineers should know?
Engineers should know that the H5AN8G6NCJR-VKC is an 8Gb DDR4 SDRAM with 512M x 16 organization, 2666 Mbps data rate, 1.2V supply, FBGA-96 package, and 0°C to +95°C operating temperature. It features auto self-refresh, write leveling, CRC, and dynamic ODT for reliable high-speed operation.

엔지니어링 참조 데이터: H5AN8G6NCJR-VKC — 비교, 설계 지침 및 규정 준수 정보.

선택 가이드

Choose the H5AN8G6NCJR-VKC when you need a reliable 8Gb DDR4 SDRAM with 2666 Mbps data rate and FBGA-96 package. It is ideal for server, networking, and embedded applications. If you require higher speed, consider the H5AN8G6NDJR-XNC (3200 Mbps). For cross-brand alternatives, the Samsung K4A8G165WB-BCRC and Micron MT40A1G8SA-075E are pin-compatible and offer similar specs. The Nanya NT5CC256M16ER-EKT is a lower-density option (4Gb) but may be suitable for cost-sensitive designs. Always verify pinout and timing parameters before substitution.

대체품과의 비교

파라미터 이 제품 H5AN8G6NDJR-XNC K4A8G165WB-BCRC MT40A1G8SA-075E
Package FBGA-96 FBGA-96 FBGA-96 FBGA-96
Brand SK Hynix SK Hynix Samsung Micron
Density 8 Gb 8 Gb 8 Gb 8 Gb
Data Rate 2666 Mbps 3200 Mbps 2666 Mbps 2666 Mbps
Supply Voltage 1.2V 1.2V 1.2V 1.2V
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C
Lead-Free Yes Yes Yes Yes

주요 차별점

  • Higher speed grade than base part (vs H5AN8G6NCJR-xxC)
  • Cross-brand compatibility (vs K4A8G165WB-BCRC)
  • Low power consumption (vs MT40A1G8SA-075E)

설계 노트

For DDR4 routing, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms differential for DQS and CK. Keep trace lengths matched within +/- 10 mils for data groups and +/- 20 mils for address/command. Use ground planes under the FBGA-96 package to minimize noise.

Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the balls. Use a solid power plane for VDD and VDDQ. The 1.2V supply should have low impedance across the frequency range of interest to ensure stable operation at 2666 Mbps.

The H5AN8G6NCJR-VKC operates up to +95°C. Ensure adequate airflow or heatsinking in high-density designs. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA. For high-power applications, consider thermal vias under the package.

규정 준수 정보

RoHS
Compliant
REACH
Compliant
AEC-Q100
무연
무할로겐
분쟁 광물
Unknown

Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.

데이터 검증일: 2026-08-19 — XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터

관련 검색

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관련 부품 & 용어

SK Hynix H5AN8G6NCJR-VKC H5AN8G6NDJR-XNC K4A8G165WB-BCRC MT40A1G8SA-075E DDR4 SDRAM SDRAM FBGA-96 BGA RoHS REACH JEDEC server networking embedded systems 1.2V 2666 Mbps
관련 기술 가이드
H5AN8G6NCJR-VKC 완벽 가이드: SK hynix 8Gb DDR4 SDRAM 2666Mbps 사양, 가격 및 설계 적용
H5AN8G6NCJR-VKC: SK hynix 8Gb DDR4 SDRAM, 512M x16, 2666 Mbps, 1.2V, FBGA-96. 2026-09-14 기준 $60부터 재고 보유. 전체 사양 및 설계 가이드.
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