H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix
부품 번호: H5AN8G6NCJR-UHC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
H5AN8G6NCJR-UHC 개요
DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both edges of the clock, doubling the effective data rate of DDR3 at the same internal clock frequency. Within the memory hierarchy it sits as main-memory class volatile storage, above flash (NOR/NAND) and below CPU caches. The JEDEC-defined DDR4 generation adds bank groups, a lower 1.2 V core supply, and finer process geometries to raise bandwidth and cut power versus DDR3.
Key features of this device include the 2400 Mbps/pin data rate, the x16 data-width organization that suits 16-bit and 32-bit memory buses in embedded designs, 0C to +95C operating range with automatic self-refresh, and the standard DDR4 feature set: auto precharge, asynchronous reset, data mask (DM), write leveling, CRC, dynamic on-die termination (ODT), and ZQ calibration. The -UHC speed-grade suffix encodes the 2400 Mbps binning and operating temperature class.
The die is fabricated on SK Hynix CMOS DRAM process technology with reduced cell leakage, supporting the low standby and self-refresh currents expected of the DDR4 generation. Bank-group architecture allows back-to-back accesses to different bank groups at maximum bus speed, sustaining effective bandwidth close to the theoretical 2400 MT/s.
Typical applications include main memory for industrial controllers, embedded computing modules and COM Express boards, firmware logging buffers, network appliances, and replacement sourcing for DDR4-2400 x16 designs where the H5AN8G6NCJR family is specified.
Design consideration: the x16 organization means only one chip select per 16 bits is needed, simplifying routing, but all DDR4 fly-by or point-to-point topologies still require length-matched address/command traces and per the JEDEC DDR4 specification a VTT termination rail.
This page adds drop-in alternatives, procurement FAQs, and design notes beyond the raw datasheet: it synthesizes distributor stock data and cross-reference findings into one decision resource.
드롭인 대체품: H5AN8G6NCJR-UHC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5AN8G6NCJR-UHC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Operating Temperature, Supply Voltage (VDD), Data Rate, Lead-Free / Halogen-Free.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5AN8G6NDJR-UHC
✅ 드롭인✓ 재고 있음
$34.6 / 개
데이터시트 보기 →H5AN8G6NCJR-VKC
✅ 드롭인✓ 재고 있음
$60 / 개
데이터시트 보기 →H5AN8G6NAFR-UHC
✅ 드롭인✓ 재고 있음
$5.7422 / 개
데이터시트 보기 →H5AN8G6NCJR-RDC
✅ 드롭인✓ 재고 있음
$19.6875 / 개
데이터시트 보기 →H5AN8G6NCJR-PBC
✅ 드롭인✓ 재고 있음
$3.3 / 개
데이터시트 보기 →H5AN8G6NCJR-UHC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 8 Gb |
| 메모리 구성 | 512M x 16 |
| Speed Grade | DDR4-2400 (2400 Mbps/pin) |
| 공급 전압 | 1.2 V |
| 패키지 | FBGA-96 (96-ball) |
| 실장 유형 | Surface Mount (BGA) |
| 동작 온도 | 0C to +95C |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask (DM) | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Dynamic On-Die Termination | Yes |
| ZQ Calibration | Yes |
| Lead-Free / Halogen-Free | Yes (per family datasheet) |
H5AN8G6NCJR-UHC fbga-96 (96-ball) 핀 구성 가이드
H5AN8G6NCJR-UHC(fbga-96 (96-ball) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5AN8G6NCJR-UHC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5AN8G6NCJR-UHC 적합 용도: 6 애플리케이션s: Industrial Controller Main Memory, Embedded Computing Modules (COM/SOM), Network Appliance Packet Buffering, Firmware Logging and Data Acquisition, Replacement Sourcing / BOM Continuity, Automotive-adjacent and Display Compute (non-safety).
Industrial Controller Main Memory
The H5AN8G6NCJR-UHC serves as main system DRAM in PLCs, motion controllers, and industrial gateways that run embedded Linux or RTOS images too large for on-chip SRAM. Its 8Gb (1 GB) density in a single x16 device lets a controller achieve a 16-bit or 32-bit DDR4 bus with one or two packages, reducing layer count and trace count on dense industrial boards. The 0C to +95C operating range with automatic self-refresh covers unventilated cabinet environments, and the 1.2 V DDR4 interface cuts memory-subsystem power versus DDR3 by roughly 20 percent. Layout must follow the controller vendor's fly-by or point-to-point DDR4 routing guide, including ZQ calibration resistor placement and VTT termination, to sustain the full 2400 Mbps/pin data rate.
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Embedded Computing Modules (COM/SOM)
Computer-on-modules and system-on-modules use the H5AN8G6NCJR-UHC as soldered-down main memory, replacing SO-DIMM sockets for shock, vibration, and height savings. The single-package 8Gb x16 organization lets a module designer populate 1 GB or 2 GB configurations on a credit-card-sized substrate, and the FBGA-96 footprint is compatible across the NCJR/NDJR/NAFR speed bins for sourcing flexibility over a multi-year module lifecycle. At DDR4-2400, the x16 device delivers up to 4.8 GB/s per package peak bandwidth, sufficient for HMI rendering, protocol conversion, and edge analytics workloads. Memory controller training should be re-run whenever a different speed bin or die revision is fitted, and SPD-like configuration tables in the module bootloader must list every qualified MPN.
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Network Appliance Packet Buffering
Routers, switches, and industrial firewalls use DDR4 SDRAM as deep packet buffers, flow tables, and log storage. The H5AN8G6NCJR-UHC provides 1 GB per x16 package, and its bank-group architecture sustains back-to-back accesses across bank groups at the full 2400 Mbps bus rate, which matters when the memory must absorb bursts at line rate. CRC and data-mask features offload link integrity and partial-write handling from the CPU. Designers commonly pair two packages for a 32-bit bus, doubling effective bandwidth while sharing a common address/command bus. The asynchronous RESET_n function allows a management controller to recover the DRAM after a watchdog event without a full board power cycle, improving availability figures in unattended network cabinets.
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Firmware Logging and Data Acquisition
Test instruments, data loggers, and medical diagnostic devices buffer acquisition streams in DDR4 before committing to flash. The H5AN8G6NCJR-UHC's 8Gb capacity holds roughly 1 GB of samples, and its data-mask function lets the host write only valid frame regions without read-modify-write cycles, improving sustained write throughput. Auto precharge reduces command overhead for the sequential streaming typical of acquisition buffers. The 1.2 V supply and modest self-refresh current help battery-powered instruments extend sleep endurance, since the DRAM can hold the buffer during short idle windows. Designers should size the bulk decoupling on the VDD and VTT rails for burst current and follow the datasheet ZQ calibration requirement (external precision resistor) to keep output driver impedance within spec across temperature.
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Replacement Sourcing / BOM Continuity
Many legacy industrial and networking boards specify the H5AN8G6NCJR-UHC, and buyers facing shortages can fill BOM lines with the pin-compatible family variants documented on this page. The H5AN8G6NDJR-UHC (3200 Mbps) and H5AN8G6NCJR-VKC (2666 Mbps) are faster bins of the same die family and drop directly onto the same FBGA-96 land pattern with the controller configured at 2400-compatible timings. Procurement should demand date codes, traceability, and warranty terms - channels such as Sourcengine offer factory-direct or authorized stock with 3-year warranty - because DRAM is a common target for re-marking. Always re-run memory training after fitting any substitute and record the qualified alternate MPNs in the bootloader configuration table for factory consistency.
추천
Automotive-adjacent and Display Compute (non-safety)
Infotainment-adjacent units, digital signage players, and dashboard-adjacent compute modules (non-safety domains) use the H5AN8G6NCJR-UHC where DDR4-2400 bandwidth is sufficient for video decode buffers and graphics frame stores. A single x16 package streams up to 4.8 GB/s peak, adequate for 1080p-class decode pipelines, while the 8Gb density accommodates double-buffered framebuffers plus application memory. The dynamic on-die termination feature helps signal integrity when the DRAM sits several centimeters from the SoC on a display PCB with limited layer count. Note that this standard-temperature part is not AEC-Q100 qualified; automotive safety or severe-temperature programs must instead select an automotive-qualified DRAM family from the manufacturer's automotive catalog.
추천
추천 제품 요약
엔지니어링 참조 데이터: H5AN8G6NCJR-UHC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5AN8G6NDJR-UHC | H5AN8G6NCJR-VKC | H5AN8G6NAFR-UHC | H5AN8G6NCJR-RDC |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density / Organization | 8 Gb / 512M x 16 | 8 Gb / 512M x 16 | 8 Gb / 512M x 16 | 8 Gb / 512M x 16 | 8 Gb / 512M x 16 |
| Data Rate | 2400 Mbps/pin | 3200 Mbps/pin | 2666 Mbps/pin | 2400 Mbps/pin | 2133 Mbps/pin class |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Auto Self-Refresh | Yes | Yes | Yes | Yes | Yes |
| Feature Set (CRC / Write Leveling / Dynamic ODT) | Yes / Yes / Yes | Yes / Yes / Yes | Yes / Yes / Yes | Yes / Yes / Yes | Yes / Yes / Yes |
주요 차별점
- Exact-spec DDR4-2400 bin at typically lower cost than faster bins (vs H5AN8G6NDJR-UHC)
- Guaranteed-headroom second source in the same footprint (vs H5AN8G6NCJR-VKC)
- Newer-generation die revision at the same speed (vs H5AN8G6NAFR-UHC)
설계 노트
At 2400 Mbps/pin, DDR4 x16 routing demands length-matched DQS/DQ groups (intra-byte-lane skew typically held within +/-10 ps per controller guide) and fly-by or point-to-point address/command topology per the memory controller's design guide. The x16 device reduces DQ trace count to 16 plus one DQS pair per package, which eases routing on 4-layer boards, but keep the ZQ calibration resistor (240 ohm, 1 percent) connected to ZQ pin with a short, low-inductance path to ground; improper ZQ layout shifts output driver impedance and causes eye closures at speed.
Provide separate 1.2 V VDD and VDDQ rails with bulk (22-47 uF) plus per-ball high-frequency (0.1 uF) decoupling close to the package, and a VTT termination rail generated from a dedicated DDR termination regulator sized for the dynamic termination current. Estimated: at 2400 Mbps with typical activity factors, a single 8Gb x16 DDR4 device draws on the order of several hundred milliwatts - derive the exact budget from the datasheet IDD specifications for your access pattern, and derate the regulator for the transient burst current of bank-group interleaving.
Do not swap speed bins without re-running memory controller training: the -UHC (2400), -VKC (2666), and -NDJR (3200) bins are footprint-compatible, but each boots with different CAS/tRCD/tRP timing tables, and older bootloaders often hard-code a single MPN. Maintain a qualified-MPN list in firmware, honor the asynchronous RESET_n sequencing requirement (RESET_n must be asserted during power ramp), and only source through channels offering date codes and traceability - DRAM is frequently re-marked on the open market.
규정 준수 정보
Family documentation (Alldatasheet entry) lists Lead-Free & Halogen-Free construction for the H5AN8G6NCJR series. Part-number-specific RoHS/REACH/conflict-minerals certificates were not present in the provided web data and must be requested from SK Hynix.
