H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
Référence : H5AN8G6NCJR-VKC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $79.55 | $79,55 |
| 10 | $75 | $750,00 |
| 100 | $70 | $7 000,00 |
| 500 | $65 | $32 500,00 |
| 1 000 | $60 | $60 000,00 |
H5AN8G6NCJR-VKC Présentation
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It offers higher speed, lower operating voltage (1.2V vs 1.5V for DDR3), and improved signal integrity through on-die termination (ODT) and data bus inversion (DBI). DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, providing the bandwidth and capacity required for modern computing workloads.
Key features include a burst length of 8 (BL8) with burst chop (BC4), programmable CAS latency, write leveling, dynamic on-chip termination (Dynamic ODT), ZQ calibration, and CRC (cyclic redundancy check) for data integrity. The device supports auto self-refresh, auto precharge, asynchronous reset, and data mask functions, ensuring reliable operation in demanding environments. It operates over a temperature range of 0°C to +95°C (TC), making it suitable for commercial and industrial applications.
The H5AN8G6NCJR-VKC utilizes advanced CMOS process technology, achieving low power consumption with a typical operating current of 28mA (IDD2N) and 45mA (IDD4R). The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, enabling high-speed signal routing. The device is lead-free and halogen-free, complying with RoHS and REACH regulations.
Typical applications include server main memory, networking switches and routers, high-performance computing (HPC), and embedded systems requiring high-density, high-bandwidth memory. The 2666 Mbps data rate and 8Gb density make it ideal for memory modules (DIMMs) and system-on-module (SoM) designs.
When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. Follow the DDR4 JEDEC standard (JESD79-4) for signal integrity and layout guidelines, including controlled impedance traces and matched lengths for the data, address, and command buses.
Alternatives de remplacement direct pour H5AN8G6NCJR-VKC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G6NCJR-VKC (même facteur de forme et même empreinte) — différant par Package, Operating Temperature, Data Rate, RoHS Status, Burst Length.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G6NDJR-XNC
✓ En stock
$55.6818 / unité
Voir la fiche technique →H5AN8G6NAFR-UHC
✓ En stock
$5.7422 / unité
Voir la fiche technique →K4A8G165WB-BCRC
✓ En stock
$12.57 / unité
Voir la fiche technique →NT5CC256M16ER-EKT
✓ En stock
$22 / unité
Voir la fiche technique →W634GU6RB12I
✓ En stock
$5.6 / unité
Voir la fiche technique →MT40A1G8SA-075E
📋 Alternative de référence (hors catalogue)
H5AN8G6NCJR-VKC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 512M x 16 |
| Débit de données | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| Température de fonctionnement | 0°C to +95°C |
| Boîtier | FBGA-96 |
| Operating Current (IDD2N) | 28 mA |
| Operating Current (IDD4R) | 45 mA |
| Burst Length | 8 (BC4) |
| Lead-Free | Yes |
| Sans halogène | Yes |
| RoHS | Compliant |
Configuration des broches de H5AN8G6NCJR-VKC
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | VSS — Ground |
| Broche B1 | DQ1 — Data input/output 1 |
| Broche B2 | VDDQ — I/O power supply |
| Broche B3 | DQ2 — Data input/output 2 |
| Broche C1 | DQ3 — Data input/output 3 |
| Broche C2 | VSSQ — I/O ground |
| Broche C3 | DQ4 — Data input/output 4 |
| Broche D1 | DQ5 — Data input/output 5 |
| Broche D2 | VDD — Power supply |
| Broche D3 | DQ6 — Data input/output 6 |
| Broche E1 | DQ7 — Data input/output 7 |
| Broche E2 | VSS — Ground |
| Broche E3 | DQS0 — Data strobe 0 |
| Broche F1 | DQS0# — Data strobe 0 complement |
| Broche F2 | VDDQ — I/O power supply |
| Broche F3 | DM0 — Data mask 0 |
| Broche G1 | VSSQ — I/O ground |
| Broche G2 | CK — Clock |
| Broche G3 | CK# — Clock complement |
Applications typiques
H5AN8G6NCJR-VKC convient pour 6 applications: Server Main Memory, Networking Equipment, High-Performance Computing (HPC), Embedded Systems, Data Center Storage, Telecommunications.
Server Main Memory
The H5AN8G6NCJR-VKC provides 8Gb density and 2666 Mbps data rate, making it ideal for server DIMMs. Its low 1.2V operation reduces power consumption in data centers. The high bandwidth supports virtualization, cloud computing, and big data analytics. When used in RDIMMs, the on-die termination and CRC ensure signal integrity over long traces. The 96-ball FBGA package allows high-density module designs, enabling larger memory capacity per server.
Recommandé
Networking Equipment
In networking switches and routers, the H5AN8G6NCJR-VKC provides high-bandwidth memory for packet buffering and forwarding tables. Its 2666 Mbps data rate ensures low latency for high-throughput traffic. The auto self-refresh and low power modes help manage thermal budgets in compact chassis. The FBGA-96 package fits space-constrained line cards. The device's CRC and write leveling features enhance reliability in noisy environments.
Recommandé
High-Performance Computing (HPC)
The H5AN8G6NCJR-VKC supports HPC applications requiring large memory capacity and high bandwidth. Its 8Gb density allows building high-capacity memory pools. The 2666 Mbps data rate provides fast data access for compute-intensive workloads. The low operating voltage reduces power consumption in large clusters. The device's advanced features like dynamic ODT and ZQ calibration ensure stable operation at high speeds.
Recommandé
Embedded Systems
The H5AN8G6NCJR-VKC is suitable for embedded systems requiring high-density memory, such as industrial PCs and edge computing devices. Its 8Gb density provides ample memory for complex applications. The 0°C to +95°C temperature range covers most embedded environments. The FBGA-96 package is compact for space-limited designs. The device's low power consumption is beneficial for battery-powered or thermally constrained systems.
Recommandé
Data Center Storage
In data center storage systems, the H5AN8G6NCJR-VKC provides high-bandwidth memory for caching and metadata management. Its 2666 Mbps data rate accelerates storage controllers. The low power consumption helps reduce operational costs. The device's reliability features, such as CRC and auto self-refresh, ensure data integrity. The FBGA-96 package enables high-density storage controller designs.
Recommandé
Telecommunications
The H5AN8G6NCJR-VKC is used in telecom infrastructure for buffering and processing. Its high bandwidth supports 5G and edge computing workloads. The 1.2V operation reduces power in base stations. The device's wide temperature range and reliability features make it suitable for outdoor equipment. The FBGA-96 package allows compact line card designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G6NCJR-VKC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G6NDJR-XNC | K4A8G165WB-BCRC | MT40A1G8SA-075E |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | SK Hynix | SK Hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Data Rate | 2666 Mbps | 3200 Mbps | 2666 Mbps | 2666 Mbps |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lead-Free | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Higher speed grade than base part (vs H5AN8G6NCJR-xxC)
- Cross-brand compatibility (vs K4A8G165WB-BCRC)
- Low power consumption (vs MT40A1G8SA-075E)
Notes de conception
For DDR4 routing, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms differential for DQS and CK. Keep trace lengths matched within +/- 10 mils for data groups and +/- 20 mils for address/command. Use ground planes under the FBGA-96 package to minimize noise.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the balls. Use a solid power plane for VDD and VDDQ. The 1.2V supply should have low impedance across the frequency range of interest to ensure stable operation at 2666 Mbps.
The H5AN8G6NCJR-VKC operates up to +95°C. Ensure adequate airflow or heatsinking in high-density designs. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA. For high-power applications, consider thermal vias under the package.
Informations de conformité
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
