IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
부품 번호: IAUC41N06S5N102ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.86 | $8.60 |
| 100 | $0.74 | $74.00 |
| 500 | $0.65 | $325.00 |
| 1,000 | $0.58 | $580.00 |
IAUC41N06S5N102ATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to commutate current between its drain and source terminals under control of a gate-source voltage. It belongs to the broader family of power semiconductors → transistors → field-effect transistors → MOSFETs. OptiMOS 5 represents Infineon's fifth-generation 60 V/100 V/150 V trench MOSFET platform, optimized for low conduction and switching losses simultaneously - a category improvement that earlier planar generations could not deliver.
The headline differentiators are the 10.2 mΩ maximum-rated R DS(on) at 10 V V GS, the small 12.5 nC Q G that limits gate-driver losses and dead-time, and the PG-TDSON-8-33 exposed-pad package that keeps the junction-to-case thermal resistance θJC at the low end of its class. The OptiMOS 5 cell also lowers reverse-recovery charge (Q rr) and output capacitance (C oss) compared with the prior OptiMOS 3 and OptiMOS 4 generations, directly shrinking switching-converter dead-time losses and EMI ringing.
Architecturally, the die uses a stripe-trench cell layout with a 60 V breakdown rating and is qualified to AEC-Q101 for automotive stress-test conditions. Its low figure-of-merit R DS(on) × Q G makes it especially attractive for high-frequency synchronous rectification, where every additional nanocoulomb of gate charge translates into measurable driver loss at the system level.
Typical applications include automotive DC-DC converters (48 V to 12 V buck/boost and 12 V point-of-load), LED headlamp drivers, ADAS sensor power rails, motor-drive H-bridges for seat/valve actuators, hot-swap and OR-ing controllers, and e-fuse protection circuits. The 60 V rating provides ample margin above the automotive 24 V transient load-dump events specified in ISO 7637-2.
When designing with this part, keep the gate-drive loop area minimal (use the exposed pad as a Kelvin-connected thermal and gate-return node), and derate continuous current per the SOA curve on the datasheet at your expected case temperature. Use a V GS = 10 V drive when minimum R DS(on) is required; the device remains fully enhanced at 7 V but at higher conduction loss.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, giving engineers a single decision-ready reference for selecting and sourcing the IAUC41N06S5N102ATMA1.
드롭인 대체품: IAUC41N06S5N102ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IAUC41N06S5N102ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Temperature Range, Automotive Qualification, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IAUC60N04S6L030HATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.94 / 개
데이터시트 보기 →IAUC120N06S5L015ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.92 / 개
데이터시트 보기 →IAUC120N04S6N010ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.68 / 개
데이터시트 보기 →IAUCN04S7N037GATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.89 / 개
데이터시트 보기 →ISC015N06NM5ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.62 / 개
데이터시트 보기 →IAUCN08S7L033ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.86 / 개
데이터시트 보기 →IAUC41N06S5N102ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor |
| 트랜지스터 유형 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | 42 W |
| On-Resistance (RDS(on)) | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) |
| Total Gate Charge (QG) | 12.5 nC |
| 패키지 | PG-TDSON-8-33 (SSO8) Surface Mount |
| 동작 온도 범위 | -55C to +175C (junction) |
| 실장 유형 | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) |
| RoHS 상태 | Compliant |
| Channel Polarity | N-Channel (single) |
IAUC41N06S5N102ATMA1 핀 구성
| 핀 1 | S — Source (pin 1) |
| 핀 2 | S — Source (pin 2) |
| 핀 3 | S — Source (pin 3) |
| 핀 4 | G — Gate |
| 핀 5 | D — Drain (pin 5) |
| 핀 6 | D — Drain (pin 6) |
| 핀 7 | S — Source (pin 7) |
| 핀 8 | S — Source (pin 8) |
일반적인 애플리케이션
IAUC41N06S5N102ATMA1 적합 용도: 6 애플리케이션s: Automotive 12V/24V DC-DC Converters, LED Headlamp Drivers and DRL Power Stages, ADAS Sensor Power Rails (Camera/Radar/LiDAR), H-Bridge Motor Drives for Seat/Valve Actuators, Hot-Swap and OR-ing Controllers (eFuse), Body Control Modules and 24V Industrial-Automotive Hybrid Systems.
Automotive 12V/24V DC-DC Converters
The IAUC41N06S5N102ATMA1 is well-suited to 12 V-to-24 V buck/boost and 48 V-to-12 V step-down converters in mild-hybrid vehicles. Its 60 V VDS rating exceeds the ISO 7637-2 24 V load-dump transient envelope, while the 10.2 mΩ RDS(on) at 10 V VGS limits conduction loss in the synchronous-rectifier position. The 12.5 nC QG keeps gate-driver losses below 1% at 200 kHz switching frequency, allowing compact high-density converter designs that meet automotive thermal budgets without active cooling.
추천
LED Headlamp Drivers and DRL Power Stages
In automotive LED headlamp matrix drivers and daytime running lamps, the IAUC41N06S5N102ATMA1 serves as the high-side or low-side switching element. Its 47 A continuous current rating covers multi-LED strings while the 42 W power dissipation capability supports the high inrush when PWM-dimming cold filaments. The exposed-pad PG-TDSON-8-33 package allows direct copper-bond heatsinking onto the lamp housing PCB, keeping junction temperature in the safe operating area at ambient temperatures up to 105 C inside headlamp enclosures.
추천
ADAS Sensor Power Rails (Camera/Radar/LiDAR)
ADAS sensors including forward cameras, 77 GHz radar front-ends, and LiDAR scanner modules need clean point-of-load regulation from a noisy 12 V battery bus. The IAUC41N06S5N102ATMA1 in the high-side switch position provides reverse-battery protection and inrush current limiting thanks to its low 10.2 mΩ RDS(on) and 47 A current capability. Its AEC-Q101 qualification and 175 C maximum junction temperature ensure the part survives under-hood thermal stress while protecting sensitive analog and RF sensor electronics downstream.
추천
H-Bridge Motor Drives for Seat/Valve Actuators
In automotive seat-adjustment, HVAC valve, and door-latch H-bridge actuators the IAUC41N06S5N102ATMA1 forms both the high-side and low-side switches. Its low QG of 12.5 nC supports PWM frequencies above 25 kHz for silent operation above the audible band, and its low RDS(on) minimizes the I²R conduction loss that dominates in 4-quadrant current-mode actuators. The 60 V rating gives ample headroom for the inductive flyback of brushed DC motors at 24 V bus levels.
추천
Hot-Swap and OR-ing Controllers (eFuse)
The IAUC41N06S5N102ATMA1 is an ideal building block for automotive eFuse and OR-ing controller circuits that need to interrupt a faulted 12 V/24 V load within microseconds. Its 10.2 mΩ RDS(on) keeps steady-state dissipation under 1 W at 10 A load, while the 60 V VDS withstands the inductive kick of cables during sudden disconnect events. The PG-TDSON-8-33 package's exposed pad also acts as the thermal relief surface for sustained overcurrent events before the protection circuit trips.
추천
Body Control Modules and 24V Industrial-Automotive Hybrid Systems
Body control modules (BCMs) aggregate loads across lighting, mirror, lock, and HVAC subsystems, frequently combining 12 V and 24 V rails in commercial vehicle variants. The IAUC41N06S5N102ATMA1 supports both with its 60 V rating, and its 47 A continuous drain current is comfortably above any single-channel BCM load. The OptiMOS 5 architecture also reduces EMI emissions compared to older OptiMOS 3 parts - a meaningful improvement for BCMs that must pass CISPR 25 Class 5 automotive EMC conformance.
추천
추천 제품 요약
엔지니어링 참조 데이터: IAUC41N06S5N102ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IAUC60N04S6L030HATMA1 | IAUC120N06S5L015ATMA1 | IAUC120N04S6N010ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-33 (SSO8) | PG-TDSON-8-33 (SSO8) | PG-TDSON-8-33 (SSO8) | PG-TDSON-8-33 (SSO8) | PG-TDSON-8-33 (SSO8) |
| Drain-Source Voltage (VDS) | 60 V | 40 V | 60 V | 40 V | 60 V |
| On-Resistance (RDS(on)) | 10.2 mΩ @ 10V | 3.0 mΩ @ 10V | 1.5 mΩ @ 10V | 1.0 mΩ @ 10V | 1.5 mΩ @ 10V |
| Automotive Qualification | AEC-Q101 (OptiMOS 5 automotive) | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Generation | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 |
주요 차별점
- Balanced RDS(on) × QG figure-of-merit (vs IAUC120N06S5L015ATMA1)
- AEC-Q101 automotive qualification (vs Industrial-only MOSFETs in the same PG-TDSON-8-33 package)
- Wide VDS safety margin for 24 V buses (vs IAUC60N04S6L030HATMA1)
설계 노트
Estimated: at 25 A continuous drain current with VGS=10 V and VDS in the linear region, the IAUC41N06S5N102ATMA1 dissipates approximately 25 A² × 10.2 mΩ = 6.4 W. Mount the exposed pad of the PG-TDSON-8-33 onto at least 25 mm² of 2 oz copper, with thermal vias to a copper pour on the opposite PCB layer, to keep the junction below 175 C. Without a heatsink the package θJA will limit the design to under 2 W continuous dissipation.
Use a Kelvin-connected gate-drive layout by routing the gate drive return directly to the source-pin closest to the gate (pin 4), bypassing the package's main source pins. This eliminates source-inductance-induced gate-drive ringing that would otherwise slow switching edges and increase switching loss. Place the gate-drive resistor within 5 mm of pin 4 and keep the gate-drive loop area under 25 mm².
Do not operate the IAUC41N06S5N102ATMA1 above its 60 V VDS rating even transiently - automotive load-dump events on a 24 V bus can reach 35 V steady-state with superimposed transients up to 60 V, leaving no safety margin. For 24 V commercial-vehicle designs, verify ISO 7637-2 test pulse compliance with an oscilloscope capture before committing to production PCB layout.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. AEC-Q101 automotive qualified (note: AEC-Q100 is for ICs; power MOSFETs are qualified to AEC-Q101).
