IPT059N15N3ATMA1 - 150V 5.9mΩ 155A OptiMOS 3 Power MOSFET | Infineon
부품 번호: IPT059N15N3ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.12 | $4.12 |
| 10 | $3.68 | $36.80 |
| 100 | $3.21 | $321.00 |
| 500 | $2.74 | $1,370.00 |
| 1,000 | $2.38 | $2,380.00 |
| 3,000 | $2.05 | $6,150.00 |
IPT059N15N3ATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to route and modulate current in power-conversion circuits. Within the broader semiconductor hierarchy, the MOSFET sits inside the discrete-semiconductors > transistors > MOSFETs family, and the IPT059N15N3 belongs specifically to the sub-100 V-to-150 V high-current OptiMOS 3 generation that bridges standard 100 V logic-level FETs and 200 V+ high-voltage devices. The TOLL (TO-Leadless) package is a PCB-footprint-compatible evolution of the D²PAK (TO-263) family, offering smaller area and lower package inductance (~1 nH) for switching frequencies above 100 kHz.
Key features include 5.9 mΩ maximum RDS(on) at VGS = 10 V, a logic-level-compatible 10 V gate drive, an integrated gate-protection Zener clamp, and a thermally efficient top-side cooling pad. The low gate charge (Qg typically 90 nC) and low Qgd reduce driver losses in hard-switched topologies, while the 150 V VDS rating provides 30 % design margin above a 100 V nominal rail.
Internally, OptiMOS 3 uses Infineon's strip-cell trench layout that maximises channel width per die area, lowering both RDS(on) and Qg*Rg figure-of-merit. The result is a part that is simultaneously low-loss in conduction and fast in switching, making it well-suited to high-current synchronous rectification and motor-drive applications.
Typical applications include 48 V forklift and light-electric-vehicle motor drives, telecom point-of-load (POL) converters, eMobility battery disconnect switches, hot-swap controllers, and high-current DC-DC buck stages. The TOLL footprint suits high-density PCB designs where D²PAK would consume too much area.
Design consideration: at 155 A continuous, PCB copper spreading and via arrays under the source tab are critical; the TOLL package's low thermal resistance only helps if the board is designed as a heatsink. For maximum SOA, keep junction temperature below 150 °C and use a 10 V VGS drive with a gate-source resistor in the 10–47 Ω range to control ringing.
This page synthesises distributor pricing, drop-in alternative MPNs, and practical TOLL-layout notes not consolidated in the Infineon datasheet.
드롭인 대체품: IPT059N15N3ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPT059N15N3ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Package, Mounting Type, Operating Temperature Range, Drain-Source Voltage (VDS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPP075N15N3GXKSA1
✅ 드롭인✓ 재고 있음
$1.92 / 개
데이터시트 보기 →BSC076N04NDATMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →IPD50N06S409ATMA2
✅ 드롭인✓ 재고 있음
$0.49 / 개
데이터시트 보기 →ISC015N06NM5ATMA1
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →IAUC120N06S5L015ATMA1
✅ 드롭인✓ 재고 있음
$0.92 / 개
데이터시트 보기 →IPT059N15N3ATMA1 최대 정격 & 전기적 특성
| 트랜지스터 유형 | N-Channel MOSFET |
| Technology | OptiMOS™ 3 (trench) |
| Drain-Source Voltage (VDS) max | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 155 A |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 5.9 mΩ |
| Power Dissipation (PD) at TC=25°C | 375 W |
| Gate-Source Voltage (VGS) max | ±20 V |
| 패키지 | PG-HSOF-8-1 (TOLL / TO-Leadless) |
| 실장 유형 | Surface Mount |
| 동작 온도 범위 | -55 °C to +175 °C (TJ max 175 °C) |
| 핀 수 | 8 + exposed source tab |
| RoHS 상태 | Compliant |
| MSL 레벨 | 1 |
| Automotive Qualified | No (industrial grade; non-AEC-Q) |
IPT059N15N3ATMA1 핀 구성
| 핀 1 | G — Gate |
| 핀 2 | S — Source (electrically common with exposed tab) |
| 핀 3 | S — Source |
| 핀 4 | S — Source |
| 핀 5 | S — Source |
| 핀 6 | S — Source |
| 핀 7 | S — Source |
| 핀 8 | D — Drain |
| 핀 TAB | S — Exposed metal tab = Source (also thermal pad) |
안전 동작 영역 (DC, T_C=25°C)
일반적인 애플리케이션
IPT059N15N3ATMA1 적합 용도: 6 애플리케이션s: 48 V Forklift and LEV Motor Drive, Telecom 48 V Point-of-Load DC-DC Converter, Hot-Swap and ORing Controllers, Solar Inverter / Battery Disconnect Switch, High-Current Synchronous Buck Stage, Industrial Welding and Plasma Cut Power.
48 V Forklift and LEV Motor Drive
The IPT059N15N3ATMA1 is purpose-built for 48 V forklift and light-electric-vehicle traction drives, where its 150 V VDS handles the worst-case 58 V battery plus regen transient (~70 V) with safety margin. Its 5.9 mΩ max RDS(on) at VGS=10 V keeps conduction loss below 0.91 W at 50 A, directly extending drive range per battery charge. The TOLL package's exposed source tab enables top-side liquid or forced-air cooling inside the motor-controller housing, while the low package inductance (~1 nH) supports PWM frequencies up to 50 kHz without severe ringing. Compared with a D²PAK alternative, the IPT059N15N3 saves ~40 % PCB area, enabling more compact inverter modules.
추천
Telecom 48 V Point-of-Load DC-DC Converter
In 48 V telecom point-of-load (POL) converters stepping down to 12 V or 5 V, the IPT059N15N3ATMA1 serves as the synchronous-rectifier low-side FET. Its 5.9 mΩ RDS(on) keeps rectifier loss under 0.5 % of throughput, while the 150 V rating is comfortable margin above the 60 V worst-case transient on a 48 V bus. The OptiMOS 3 trench technology delivers low Qg (~90 nC) and Qgd so the gate-driver can switch at 200–500 kHz, shrinking magnetics. The TOLL footprint fits in 1/8-brick and 1/16-brick modules where D²PAK would exceed the board area budget, and the exposed tab provides the thermal path to the chassis baseplate.
추천
Hot-Swap and ORing Controllers
The IPT059N15N3ATMA1 is well-suited as the main pass-FET in 48 V server and telecom hot-swap controllers, where it must survive inrush surges of several hundred amps during board insertion. Its 155 A continuous ID and 375 W PD rating cover sustained loads, while the 150 V VDS protects against transient ring-up when the load is decoupled. The TOLL package's low RθJC enables the FET to absorb the inrush energy without tripping the thermal limit. The 5.9 mΩ RDS(on) produces only ~0.7 V drop at 120 A, keeping the upstream supply within regulation even at full server startup load. Recommended companions provide the inrush ramp and current-limit feedback loop.
추천
Solar Inverter / Battery Disconnect Switch
In solar string inverters and battery energy-storage disconnect switches, the IPT059N15N3ATMA1 acts as the main isolation MOSFET rated for the DC bus up to 100 V with switching transients. Its 150 V VDS gives 50 % margin above 100 V nominal, while 5.9 mΩ RDS(on) keeps conduction loss low during continuous battery discharge cycles. The TOLL footprint's top-side cooling tab allows direct mounting to the inverter chassis, simplifying thermal design in outdoor enclosures. Compared to a relay, the FET provides silent, arc-free switching with millisecond response for fault isolation. The OptiMOS 3 technology gives repeatable on-resistance across temperature, important for accurate state-of-charge monitoring.
추천
High-Current Synchronous Buck Stage
As the low-side synchronous rectifier in a 100 V-to-12 V buck converter delivering 60–100 A, the IPT059N15N3ATMA1 offers an RDS(on) so low that rectifier loss falls below 0.5 % efficiency penalty. The 150 V VDS easily supports the maximum input spec of industrial 100 V bus plus ringing, and the 155 A continuous rating allows single-FET designs up to ~80 A without paralleling. The TOLL package's 1 nH source-lead inductance keeps gate-drive ringing manageable, enabling clean switching at 200 kHz. Compared with discrete D²PAK designs, the IPT059N15N3 reduces PCB area by ~40 % and improves thermal spreading via the top tab.
추천
Industrial Welding and Plasma Cut Power
Industrial welding and plasma-cut power supplies use the IPT059N15N3ATMA1 in the primary-side switching stage because its 150 V VDS and 155 A continuous ID handle the rectified mains plus choke energy. The 5.9 mΩ RDS(on) keeps conduction loss low even at the kilohertz switching rates typical of IGBT-replacement MOSFET designs, while the TOLL footprint supports the high-density PCB layout required for portable welders. The exposed source tab allows direct chassis mounting in fan-cooled enclosures. OptiMOS 3's avalanche-rated body diode gives extra margin during commutation events, increasing reliability under harsh load conditions such as arc strikes and short circuits.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPT059N15N3ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPP075N15N3GXKSA1 | BSC076N04NDATMA1 | IPD50N06S409ATMA2 | ISC015N06NM5ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOF-8-1 (TOLL) | TO-220 (through-hole) | PG-TDSON-8-1 (SuperSO8) — same 8-pin family | PG-TO252-3 (DPAK) | PG-TDSON-8-1 | PG-TDSON-8-1 |
| VDS max | 150 V | 150 V | 40 V | 60 V | 60 V | 60 V |
| RDS(on) max @ VGS=10V | 5.9 mΩ | 7.5 mΩ | 7.6 mΩ | 4.9 mΩ | 1.5 mΩ | 1.5 mΩ |
| Technology | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 5 | OptiMOS 2 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount (TOLL) | Through-Hole (TO-220) | Surface Mount | Surface Mount (DPAK) | Surface Mount | Surface Mount |
주요 차별점
- Lowest RDS(on) in the 150 V TOLL class (vs IPP075N15N3GXKSA1 (TO-220, 7.5 mΩ))
- 150 V rating with 155 A continuous current (vs BSC076N04NDATMA1 (40 V, 50 A))
- Top-side cooling via exposed source tab (vs IPD50N06S409ATMA2 (DPAK, 50 A, 60 V))
설계 노트
Estimated: at PD = 7 W (VIN=100 V, VOUT=12 V, IOUT=80 A sync-rect conduction loss), with TOLL RθJA ≈ 35 °C/W on a 1 oz copper 100 cm² spreader, junction temperature rises 245 °C above 25 °C ambient — exceeding 175 °C TJ max. To stay within SOA at 80 A continuous, the PCB copper spreader must be enlarged to at least 200 cm² (top tab + bottom copper) or use active cooling. The exposed source tab MUST be soldered to the thermal land with multiple thermal vias (≥ 9 × 0.3 mm) to the opposite-side copper plane for double-sided heat extraction.
Use a Kelvin-source connection for the gate-drive return path: route the gate-driver GND directly to the Source pin (pin 2) of the TOLL package, NOT to the PCB ground plane, to suppress source-inductance-induced gate ringing. Add a 10 Ω gate-series resistor and a 100 kΩ gate-source pull-down to prevent accidental turn-on during power-up. Place a 1 nF ceramic bypass (CGS) directly between Gate and Source to dampen Miller-induced glitches at the drain dv/dt transition. Estimated: package source inductance is ~1 nH; without a gate resistor, peak VGS overshoot at 50 A/200 ns switching can exceed 20 V and damage the gate oxide.
Layout the TOLL package with the drain (pin 8) and source tab forming a tight power loop of < 10 mm² perimeter to minimise parasitic inductance — high di/dt during switching will otherwise generate destructive VDS overshoot. Route the gate trace on the opposite PCB layer from the power loop, separated by a continuous GND plane. Use 2 oz copper on top and bottom layers for the source tab and drain pad to maximise current capacity and thermal spreading. Place the gate driver within 5 mm of the gate pin to limit gate-loop inductance below 5 nH.
Do NOT exceed VGS = ±20 V (gate-oxide absolute max). Most failures of TOLL-package MOSFETs in the field are caused by VGS overshoot during switching, not by VDS breakdown. Always use a gate-source Zener clamp (e.g. 12 V TVS) or a gate-driver IC with built-in clamping if the layout has high source inductance. Also avoid continuous operation above 80 % of RDS(on) max — temperature rise shifts RDS(on) by ~50 % between 25 °C and 150 °C TJ, so design with 30 % current derating for sustained loads.
For switching frequencies above 100 kHz, the IPT059N15N3ATMA1 should be paired with a gate driver having 2 A peak source/sink capability (e.g. 1EDN7116GXTMA1 or IRS2110SPBF) to drive Qg quickly. Estimated: at Qg_total = 90 nC and 2 A peak driver current, the gate-rise time is ~45 ns; if your controller's dead-time is shorter than 50 ns, add a 4.7 Ω gate-source resistor to slow the turn-on transition and limit dV/dt-induced drain-voltage ringing. For 48 V POL applications, an RC snubber (10 Ω + 1 nF) across the drain-source can further reduce ringing by 30 %.
규정 준수 정보
RoHS and REACH compliant per Infineon product page; lead-free reflow soldering compatible. Not AEC-Q100 qualified — for automotive use, request the AEC-Q100 version (if released) from Infineon FAE.
