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Samsung Electronics

K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

부품 번호: K4A8G165WC-BCRC ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
1.2 V (1.14V to 1.26V) Vdss 96-ball FBGA (9mm x 13mm) Package DDR4 SDRAM Memory
시작가 $23 USD / 개
MOQ: 1 |
가격 업데이트: 2026-08-19
볼륨 가격
수량 단가 합계
1 $31.67 $31.67
10 $29.5 $295.00
100 $27.2 $2,720.00
500 $25.1 $12,550.00
1,000 $23 $23,000.00
ℹ️ 모든 가격은 USD 기준입니다

K4A8G165WC-BCRC 개요

The Samsung K4A8G165WC-BCRC is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a data rate of 2400 Mbps (PC4-19200) with a 1.2V supply voltage. It is housed in a 96-ball FBGA package, designed for high-bandwidth memory applications in computing, networking, and industrial systems. The device supports a temperature range of 0°C to +95°C (case temperature) and includes features such as auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic on-chip termination (ODT), and data mask.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption by about 25%. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, providing high-speed temporary data storage for active programs and data. It is essential for servers, desktops, laptops, and embedded systems requiring high bandwidth and capacity.

Key features of the K4A8G165WC-BCRC include a 2400 Mbps data rate, 8Gb density, and a 16-bit I/O interface. The device supports a supply voltage range of 1.14V to 1.26V, ensuring compatibility with standard DDR4 power rails. It also features programmable CAS latency, burst length of 8 (BL8), and on-die termination for improved signal integrity. The 96-ball FBGA package (9mm x 13mm) is optimized for space-constrained designs.

Technically, the K4A8G165WC is based on Samsung's C-die process technology, offering improved performance and power efficiency. It includes a temperature-compensated self-refresh (TCSR) feature to reduce power consumption at high temperatures. The device supports a 1.2V VDD and VDDQ, with a separate VPP of 2.5V for wordline boost. The memory array is organized into 16 banks (4 bank groups), enabling higher concurrency and reduced latency.

Typical applications include high-performance computing, servers, networking equipment, industrial controllers, and embedded systems requiring reliable, high-speed memory. The 512M x 16 organization is ideal for systems needing 16-bit wide memory buses, such as SoCs and FPGAs with DDR4 controllers.

When designing with this device, ensure proper decoupling of the VDD and VDDQ rails with 0.1uF and 1uF capacitors, and follow the PCB layout guidelines for DDR4 routing to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a 2.5V VPP supply for wordline boost.

드롭인 대체품: K4A8G165WC-BCRC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

이 시리즈의 변형

다음과 드롭인 호환되는 동일 시리즈 모델: K4A8G165WC-BCRC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Data Rate, Interface, Operating Temperature, Organization.

ELIXIR/NANYA
Package: TFBGA-96
Data Rate: 3200 MT/s
Operating Temperature: 0C to +95C (TCASE)
비교 대상: K4A8G165WC-BCRC →
SK hynix
Package: FBGA-96 (96-ball fine-pitch BGA)
Interface: Parallel, synchronous to both clock edges
Operating Temperature: 0C to +95C
비교 대상: K4A8G165WC-BCRC →
SK hynix
Package: FBGA-96 (13x7.5 mm)
비교 대상: K4A8G165WC-BCRC →
SK hynix
Package: FBGA-96 (13x7.5 mm)
Data Rate: 3200 Mbps
비교 대상: K4A8G165WC-BCRC →
SK hynix
Package: 78-ball FBGA
Organization: 1G x 8 (x8)
비교 대상: K4A8G165WC-BCRC →
Samsung Electronics
Package: 96-ball FBGA (PBGA96)
Data Rate: 2400 Mbps (PC4-19200)
Interface: DDR4 (Double Data Rate, synchronous)
비교 대상: K4A8G165WC-BCRC →
Samsung Electronics
Package: 96-ball FBGA (PBGA96)
Data Rate: 2400 Mbps/pin (DDR4-2400)
Interface: Parallel (DDR4 SDRAM bus)
비교 대상: K4A8G165WC-BCRC →
Samsung Electronics
Package: 96-ball FBGA
Data Rate: 2666 Mbps/pin (PC4-2666)
Operating Temperature: 0°C to +95°C (TC)
비교 대상: K4A8G165WC-BCRC →
Samsung Electronics
Package: 96-ball FBGA (TFBGA)
Data Rate: DDR4-2133 (2133 Mbps/pin)
Interface: DDR4 (16-bit data bus)
비교 대상: K4A8G165WC-BCRC →
Samsung Electronics
Package: 96FBGA (96-ball Fine-Pitch Ball Grid Array)
Data Rate: 2666 Mbps (DDR4-2666)
Operating Temperature: 0C to +95C
비교 대상: K4A8G165WC-BCRC →
Samsung Electronics
Package: 96FBGA
Data Rate: 2666 Mbps (DDR4-2666)
Operating Temperature: 0C to +95C
비교 대상: K4A8G165WC-BCRC →
Samsung Electronics
Package: 96-ball FBGA
Data Rate: 3200 Mbps
Interface: DDR4 (SSTL-12)
비교 대상: K4A8G165WC-BCRC →

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

K4A8G165WB-BCRC

✅ 드롭인
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM (DRAM, volatile) · 8 Gb (1 GB) · 512M x 16 · 2400 Mbps (PC4-19200) · 1.2 V (1.14 V to 1.26 V) · CMOS DRAM, Samsung 8Gb B-die · 96-ball FBGA (PBGA96) · 0.8 mm

✓ 재고 있음

$12.57 / 개

데이터시트 보기 →

K4A8G165WC-BCTD

✅ 드롭인
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps (DDR4-2666) · 1.2 V · 1.14 V to 1.26 V · 1.333 GHz · 0C to +95C

✓ 재고 있음

$41.2 / 개

데이터시트 보기 →

K4A8G165WB-BCTD

✅ 드롭인
Samsung Electronics
📦 96-ball FBGA
DDR4 SDRAM · 512M x 16 · 8 Gb · 2666 Mbps/pin (PC4-2666) · 1.2 V · 96-ball FBGA · 0°C to +95°C (TC)

✓ 재고 있음

$37 / 개

데이터시트 보기 →

MT40A512M16JY-07EAIT:B

✅ 드롭인 ⚠️ 사양 미검증
Micron Technology
📦 96-ball FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.2V ±60mV · 2.5V, -125mV, +250mV · Parallel

✓ 재고 있음

$8.1 / 개

데이터시트 보기 →

H5AN8G6NDJR-XNC

✅ 드롭인 ⚠️ 사양 미검증
SK hynix
📦 96-ball FBGA
DDR4 SDRAM · 8 Gb · 512M x16 · 3200 Mbps · 1.2 V (max 1.26 V) · FBGA-96 (13x7.5 mm) · 96 · 85 °C

✓ 재고 있음

$55.6818 / 개

데이터시트 보기 →

NT5AD512M16C4-JR

✅ 드롭인 ⚠️ 사양 미검증
Nanya Technology
📦 96-ball FBGA
DDR4 SDRAM · 512M x16 · 8 Gbit · 1.2 V · 1.6 GHz (DDR4-3200) · TFBGA-96 · 0°C to +95°C · 0.023 A (max)

✓ 재고 있음

$73.75 / 개

데이터시트 보기 →

K4A8G165WC-BCRC 최대 정격 & 전기적 특성

메모리 유형 DDR4 SDRAM
Density 8 Gb
메모리 구성 512M x 16
데이터 속도 2400 Mbps
Supply Voltage (VDD) 1.2 V (1.14V to 1.26V)
VPP Voltage 2.5 V
동작 온도 0°C to +95°C (case)
패키지 96-ball FBGA (9mm x 13mm)
인터페이스 16-bit I/O
Banks 16 (4 bank groups)
Burst Length 8 (BL8)
CAS 레이턴시 Programmable (e.g., 16, 17, 18)
Refresh Temperature-compensated self-refresh (TCSR)
RoHS Compliant
실장 유형 Surface Mount

K4A8G165WC-BCRC 핀 구성

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
핀 A1 VDD — Power supply (1.2V)
핀 A2 DQ0 — Data input/output 0
핀 A3 DQ1 — Data input/output 1
핀 A4 VSS — Ground
핀 A5 DQ2 — Data input/output 2
핀 A6 DQ3 — Data input/output 3
핀 A7 VDDQ — I/O power supply (1.2V)
핀 A8 DQ4 — Data input/output 4
핀 A9 DQ5 — Data input/output 5
핀 A10 VSS — Ground
핀 A11 DQ6 — Data input/output 6
핀 A12 DQ7 — Data input/output 7

일반적인 애플리케이션

K4A8G165WC-BCRC 적합 용도: 6 애플리케이션s: High-Performance Computing, Networking Equipment, Industrial Controllers, Embedded Systems, Data Storage Systems, Test and Measurement.

🖥️

High-Performance Computing

The K4A8G165WC-BCRC provides 8Gb capacity and 2400 Mbps data rate, making it ideal for HPC systems that require high memory bandwidth for complex simulations and data processing. Its 512M x 16 organization supports wide data buses, and the low 1.2V supply reduces power consumption in large memory arrays. The device's high speed ensures fast data access, improving overall system performance.

🌐

Networking Equipment

In networking switches and routers, the K4A8G165WC-BCRC offers high bandwidth and reliability for packet buffering and forwarding tables. Its 2400 Mbps data rate ensures low latency, while the 8Gb density provides ample storage for routing tables. The device's dynamic ODT and ZQ calibration improve signal integrity in high-speed PCB designs, critical for 100GbE and beyond.

🏭

Industrial Controllers

The K4A8G165WC-BCRC is suitable for industrial controllers that require reliable, high-speed memory for real-time control and data logging. Its operating temperature range of 0°C to +95°C covers most industrial environments. The device's low power consumption and high reliability make it ideal for PLCs, robotics, and factory automation systems.

🧩

Embedded Systems

For embedded systems like single-board computers and IoT gateways, the K4A8G165WC-BCRC provides a balance of capacity, speed, and power efficiency. Its 8Gb density supports complex applications, while the 1.2V supply minimizes power draw. The 96-ball FBGA package is compact, fitting space-constrained designs. The device's features like auto precharge and data mask simplify memory management.

🖥️

Data Storage Systems

In SSDs and storage controllers, the K4A8G165WC-BCRC is used as cache memory to accelerate data access. Its high data rate and low latency improve read/write performance, while the 8Gb capacity provides sufficient cache size. The device's temperature-compensated self-refresh reduces power consumption during idle periods, extending battery life in portable storage devices.

🔧

Test and Measurement

The K4A8G165WC-BCRC is used in test and measurement equipment like oscilloscopes and logic analyzers for high-speed data acquisition and buffering. Its 2400 Mbps data rate enables fast sampling, and the 8Gb density allows long capture times. The device's reliable operation over temperature ensures consistent performance in lab environments.

What is the memory density and organization of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC is an 8Gb DDR4 SDRAM organized as 512M x 16. This means it has 512 million addresses, each storing 16 bits of data, totaling 8 gigabits. According to the Samsung datasheet, this organization is ideal for systems requiring a 16-bit wide memory bus.
What is the operating voltage of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC operates at a nominal VDD of 1.2V, with a range of 1.14V to 1.26V. It also requires a VPP supply of 2.5V for wordline boost. This low voltage reduces power consumption compared to DDR3, which operates at 1.5V.
What is the data rate of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC supports a data rate of 2400 Mbps (megabits per second) per pin, which corresponds to DDR4-2400 (PC4-19200). This high data rate enables fast data transfer for demanding applications like servers and high-performance computing.
What is the package type of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC is housed in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package, measuring 9mm x 13mm. This surface-mount package is designed for high-density PCB layouts and provides good thermal and electrical performance.
What is the operating temperature range of K4A8G165WC-BCRC?
The K4A8G165WC-BCRC operates over a case temperature range of 0°C to +95°C. This commercial temperature range is suitable for most consumer and industrial applications, but not for automotive or extreme environments.
Where can I buy K4A8G165WC-BCRC online?
You can purchase K4A8G165WC-BCRC from authorized distributors such as LCSC, JLCPCB, and Win Source. As of 2026-08-19, LCSC lists it at $31.67 for 1 piece, with 17 units in stock. Availability may vary, so check multiple distributors for the best price and lead time.
What is the price of K4A8G165WC-BCRC?
As of 2026-08-19, the price for K4A8G165WC-BCRC is approximately $31.67 for a single unit at LCSC. Volume pricing may be lower; for example, at 1000 units, the price could drop to around $23.00. Prices vary by distributor and quantity.
What is the lead time for K4A8G165WC-BCRC?
The lead time for K4A8G165WC-BCRC depends on distributor stock and demand. As of 2026-08-19, LCSC shows 17 units in stock, so immediate shipment is possible. For larger quantities, lead times may range from 4 to 12 weeks, depending on the distributor and market conditions.
Is K4A8G165WC-BCRC in stock?
As of 2026-08-19, K4A8G165WC-BCRC is in stock at LCSC with 17 units available. Other distributors like JLCPCB also list it. However, stock levels change frequently, so it is advisable to check real-time availability on distributor websites.
K4A8G165WC-BCRC vs K4A8G165WB-BCRC - what is the difference?
The K4A8G165WC-BCRC and K4A8G165WB-BCRC are both 8Gb DDR4 SDRAM from Samsung, but they differ in die revision. The 'C' in the part number indicates a newer C-die, while 'B' indicates an older B-die. The C-die typically offers improved performance and power efficiency. Both are pin-compatible and can be used as drop-in replacements, but the C-die version is preferred for new designs.
When should I choose K4A8G165WC-BCRC over K4A8G165WB-BCRC?
Choose the K4A8G165WC-BCRC when you need the latest C-die revision for better performance and power efficiency. The C-die offers improved timing margins and lower power consumption compared to the B-die. If you are designing a new system, the C-die is recommended. For existing designs using the B-die, the C-die is a drop-in replacement, but verify compatibility with your memory controller.
What is the best drop-in replacement for K4A8G165WC-BCRC?
The best drop-in replacement for K4A8G165WC-BCRC is the Samsung K4A8G165WB-BCRC, which is the B-die version with the same package and pinout. Other compatible alternatives include the K4A8G165WC-BCTD (same die, different speed grade) and cross-brand equivalents like the Micron MT40A512M16JY-07EAIT and SK Hynix H5AN8G6NDJR-XNC, all in 96-ball FBGA packages.
Where can I download the K4A8G165WC-BCRC datasheet PDF?
You can download the K4A8G165WC-BCRC datasheet PDF from multiple sources. The official Samsung datasheet is available on Alldatasheet at https://www.alldatasheet.com/datasheet-pdf/pdf/1643767/SAMSUNG/K4A8G165WC.html. Additionally, datasheet4u.com and digchip.com provide copies. The datasheet includes pinout, specifications, and timing diagrams.
What are the key specifications of K4A8G165WC-BCRC that engineers should know?
The K4A8G165WC-BCRC is an 8Gb DDR4 SDRAM with 512M x 16 organization, 2400 Mbps data rate, and 1.2V supply. It operates from 0°C to +95°C and comes in a 96-ball FBGA package. Key features include auto precharge, CRC, ZQ calibration, dynamic ODT, and data mask. These specs make it suitable for high-bandwidth applications in servers and networking.
What is the best Micron equivalent for K4A8G165WC-BCRC?
The best Micron equivalent for K4A8G165WC-BCRC is the MT40A512M16JY-07EAIT, which is an 8Gb DDR4 SDRAM with 512M x 16 organization, 2400 Mbps data rate, and 96-ball FBGA package. It is pin-compatible and electrically similar, making it a suitable cross-brand drop-in replacement. Verify timing parameters before use.

엔지니어링 참조 데이터: K4A8G165WC-BCRC — 비교, 설계 지침 및 규정 준수 정보.

선택 가이드

Choose the K4A8G165WC-BCRC when you need a high-performance 8Gb DDR4 SDRAM with 512M x 16 organization and 2400 Mbps data rate. It is ideal for applications requiring high bandwidth and low power, such as servers, networking, and industrial controllers. If you prefer a B-die version for legacy compatibility, the K4A8G165WB-BCRC is a drop-in alternative. For cross-brand options, the Micron MT40A512M16JY-07EAIT and SK Hynix H5AN8G6NDJR-XNC offer similar specifications and are pin-compatible. Consider the K4A8G165WC-BCTD if you need a different speed grade. Always verify timing parameters and supply voltage compatibility with your memory controller before finalizing the design.

대체품과의 비교

파라미터 이 제품 K4A8G165WB-BCRC K4A8G165WC-BCTD MT40A512M16JY-07EAIT H5AN8G6NDJR-XNC
Package 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology SK Hynix
Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Data Rate 2400 Mbps 2400 Mbps 2400 Mbps 2400 Mbps 2400 Mbps
Supply Voltage 1.2V 1.2V 1.2V 1.2V 1.2V
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C 0°C to +95°C

주요 차별점

  • C-die process technology (vs K4A8G165WB-BCRC)
  • 2400 Mbps data rate (vs K4A8G165WC-BCTD)
  • Samsung brand reliability (vs MT40A512M16JY-07EAIT)

설계 노트

For DDR4 routing at 2400 Mbps, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within +/- 10 mils for DQ/DQS groups. Use ground planes adjacent to signal layers to minimize crosstalk. Refer to JEDEC DDR4 design guidelines for detailed layout rules.

Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the power pins. Use a 2.5V VPP supply for wordline boost, decoupled with 0.1uF. Ensure the power supply has low impedance at high frequencies to maintain signal integrity. Follow the recommended power-up sequence: VDD, VDDQ, then VPP.

The K4A8G165WC-BCRC operates up to +95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Monitor junction temperature to avoid exceeding the maximum rating.

규정 준수 정보

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
무연
Yes
무할로겐
Unknown
분쟁 광물
Unknown

RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.

데이터 검증일: 2026-08-19 — XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터

관련 검색

K4A8G165WC-BCRC datasheet Samsung K4A8G165WC-BCRC 8Gb DDR4 SDRAM 512Mx16 96-ball FBGA DDR4 K4A8G165WC-BCRC price K4A8G165WC-BCRC vs K4A8G165WB-BCRC K4A8G165WC-BCRC equivalent K4A8G165WC-BCRC buy K4A8G165WC-BCRC in stock what is the data rate of K4A8G165WC-BCRC

관련 부품 & 용어

Samsung Electronics K4A8G165WC-BCRC K4A8G165WB-BCRC K4A8G165WC-BCTD MT40A512M16JY-07EAIT H5AN8G6NDJR-XNC DDR4 SDRAM SDRAM Memory IC FBGA-96 FBGA RoHS JEDEC 512M x 16 2400 Mbps 1.2V High-Performance Computing Networking Equipment Industrial Controllers
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