K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
부품 번호: K4B4G1646D-BMK0 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.5 | $3,250.00 |
| 1,000 | $5.9 | $5,900.00 |
K4B4G1646D-BMK0 개요
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 15-20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BMK0 is a key component in the memory hierarchy, providing high-speed data storage and retrieval for processors and controllers.
Key features include a density of 4Gb, an organization of 256M x 16, and a data rate of 1600 Mbps. The device supports a temperature range of -40°C to 95°C, making it suitable for industrial applications. The 96FBGA package offers a compact footprint with excellent thermal and electrical performance. The device is also lead-free and halogen-free, ensuring environmental compliance.
Technically, the K4B4G1646D-BMK0 utilizes Samsung's advanced D-die process technology, which enhances performance and reliability. The device features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It supports auto self-refresh and partial array self-refresh for power saving. The 1.35V operation reduces power dissipation, making it ideal for battery-powered and thermally constrained systems.
Typical applications include industrial computing, networking equipment, automotive infotainment, and medical devices. The wide temperature range and low power consumption make it suitable for harsh environments. In networking, it provides high-bandwidth memory for routers and switches; in automotive, it supports advanced driver-assistance systems (ADAS) and infotainment; in medical, it enables reliable data processing in diagnostic equipment.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, and the reference voltage (VREF) should be carefully routed. For high-speed operation, impedance matching and trace length matching are critical.
드롭인 대체품: K4B4G1646D-BMK0 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4B4G1646D-BMK0 (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Package, CAS Latency, Operating Temperature, Supply Voltage.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4B4G1646D-BMH9
✅ 드롭인✓ 재고 있음
$6.5 / 개
데이터시트 보기 →K4B4G1646E-BYK0
✅ 드롭인✓ 재고 있음
$1.8 / 개
데이터시트 보기 →K4B4G1646F-BYK0
✅ 드롭인✓ 재고 있음
$1.8 / 개
데이터시트 보기 →MT41K256M16HA-125
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.3636 / 개
데이터시트 보기 →NT5CB256M16CP-DI
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.5 / 개
데이터시트 보기 →IS43TR16256A-125KBLA2
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
K4B4G1646D-BMK0 최대 정격 & 전기적 특성
| Density | 4 Gb |
| 메모리 구성 | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) |
| Voltage | 1.35 V |
| 동작 온도 | -40°C to 95°C |
| 패키지 | 96FBGA (TFBGA) |
| 메모리 유형 | DDR3L SDRAM |
| Die Version | D-die |
| Lead-Free | Yes |
| 할로겐 프리 | Yes |
| RoHS Compliant | Yes |
| Number of Terminals | 96 |
| Package Code | TFBGA |
| Number of Functions | 1 |
| 데이터 속도 | 1600 Mbps |
K4B4G1646D-BMK0 핀 구성
| 핀 A1 | VDD — Power supply (1.35V) |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output 2 |
| 핀 A6 | DQ3 — Data input/output 3 |
| 핀 A7 | VDD — Power supply |
| 핀 A8 | DQ4 — Data input/output 4 |
| 핀 A9 | DQ5 — Data input/output 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output 6 |
| 핀 A12 | DQ7 — Data input/output 7 |
| 핀 B1 | VDDQ — I/O power supply |
| 핀 B2 | DQ8 — Data input/output 8 |
| 핀 B3 | DQ9 — Data input/output 9 |
| 핀 B4 | VSSQ — I/O ground |
| 핀 B5 | DQ10 — Data input/output 10 |
| 핀 B6 | DQ11 — Data input/output 11 |
| 핀 B7 | VDDQ — I/O power supply |
| 핀 B8 | DQ12 — Data input/output 12 |
| 핀 B9 | DQ13 — Data input/output 13 |
| 핀 B10 | VSSQ — I/O ground |
| 핀 B11 | DQ14 — Data input/output 14 |
| 핀 B12 | DQ15 — Data input/output 15 |
| 핀 C1 | VSS — Ground |
| 핀 C2 | DQS0 — Data strobe 0 |
| 핀 C3 | DQS#0 — Data strobe 0 complement |
| 핀 C4 | VDD — Power supply |
| 핀 C5 | DQS1 — Data strobe 1 |
| 핀 C6 | DQS#1 — Data strobe 1 complement |
| 핀 C7 | VSS — Ground |
| 핀 C8 | DQS2 — Data strobe 2 |
| 핀 C9 | DQS#2 — Data strobe 2 complement |
| 핀 C10 | VDD — Power supply |
| 핀 C11 | DQS3 — Data strobe 3 |
| 핀 C12 | DQS#3 — Data strobe 3 complement |
| 핀 D1 | VDDQ — I/O power supply |
| 핀 D2 | DM0 — Data mask 0 |
| 핀 D3 | VSSQ — I/O ground |
| 핀 D4 | DM1 — Data mask 1 |
| 핀 D5 | VDDQ — I/O power supply |
| 핀 D6 | DM2 — Data mask 2 |
| 핀 D7 | VSSQ — I/O ground |
| 핀 D8 | DM3 — Data mask 3 |
| 핀 D9 | VDDQ — I/O power supply |
| 핀 D10 | VSSQ — I/O ground |
| 핀 D11 | VDDQ — I/O power supply |
| 핀 D12 | VSSQ — I/O ground |
| 핀 E1 | A0 — Address input 0 |
| 핀 E2 | A1 — Address input 1 |
| 핀 E3 | A2 — Address input 2 |
| 핀 E4 | A3 — Address input 3 |
| 핀 E5 | A4 — Address input 4 |
| 핀 E6 | A5 — Address input 5 |
| 핀 E7 | A6 — Address input 6 |
| 핀 E8 | A7 — Address input 7 |
| 핀 E9 | A8 — Address input 8 |
| 핀 E10 | A9 — Address input 9 |
| 핀 E11 | A10/AP — Address input 10 / auto-precharge |
| 핀 E12 | A11 — Address input 11 |
| 핀 F1 | A12 — Address input 12 |
| 핀 F2 | A13 — Address input 13 |
| 핀 F3 | A14 — Address input 14 |
| 핀 F4 | BA0 — Bank address 0 |
| 핀 F5 | BA1 — Bank address 1 |
| 핀 F6 | BA2 — Bank address 2 |
| 핀 F7 | RAS# — Row address strobe |
| 핀 F8 | CAS# — Column address strobe |
| 핀 F9 | WE# — Write enable |
| 핀 F10 | CS# — Chip select |
| 핀 F11 | CKE — Clock enable |
| 핀 F12 | ODT — On-die termination |
| 핀 G1 | VDD — Power supply |
| 핀 G2 | VSS — Ground |
| 핀 G3 | VDD — Power supply |
| 핀 G4 | VSS — Ground |
| 핀 G5 | VDD — Power supply |
| 핀 G6 | VSS — Ground |
| 핀 G7 | VDD — Power supply |
| 핀 G8 | VSS — Ground |
| 핀 G9 | VDD — Power supply |
| 핀 G10 | VSS — Ground |
| 핀 G11 | VDD — Power supply |
| 핀 G12 | VSS — Ground |
| 핀 H1 | CK — Clock input |
| 핀 H2 | CK# — Clock input complement |
| 핀 H3 | VDDQ — I/O power supply |
| 핀 H4 | VSSQ — I/O ground |
| 핀 H5 | VDDQ — I/O power supply |
| 핀 H6 | VSSQ — I/O ground |
| 핀 H7 | VDDQ — I/O power supply |
| 핀 H8 | VSSQ — I/O ground |
| 핀 H9 | VDDQ — I/O power supply |
| 핀 H10 | VSSQ — I/O ground |
| 핀 H11 | VDDQ — I/O power supply |
| 핀 H12 | VSSQ — I/O ground |
| 핀 J1 | RESET# — Reset input |
| 핀 J2 | VDD — Power supply |
| 핀 J3 | VSS — Ground |
| 핀 J4 | VDD — Power supply |
| 핀 J5 | VSS — Ground |
| 핀 J6 | VDD — Power supply |
| 핀 J7 | VSS — Ground |
| 핀 J8 | VDD — Power supply |
| 핀 J9 | VSS — Ground |
| 핀 J10 | VDD — Power supply |
| 핀 J11 | VSS — Ground |
| 핀 J12 | VDD — Power supply |
일반적인 애플리케이션
K4B4G1646D-BMK0 적합 용도: 6 애플리케이션s: Industrial Computing, Networking Equipment, Automotive Infotainment, Medical Devices, Embedded Systems, Test and Measurement.
Industrial Computing
The K4B4G1646D-BMK0 is ideal for industrial computing systems that require reliable operation in harsh environments. Its industrial temperature range (-40°C to 95°C) ensures functionality in extreme conditions, while the 1.35V low-voltage operation reduces power consumption and heat generation. The 1600 Mbps data rate provides sufficient bandwidth for industrial control and data acquisition. In PLCs and industrial PCs, this memory supports real-time processing and data logging. The 96FBGA package offers a compact footprint for space-constrained designs. Recommended companion products include the NXP i.MX6ULL processor and the TI TPS51200 DDR termination regulator.
추천
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BMK0 provides high-bandwidth memory for packet buffering and forwarding. The 1600 Mbps data rate supports high-throughput data processing, while the 1.35V operation minimizes power dissipation in dense line cards. The industrial temperature range allows deployment in uncontrolled environments like remote telecom shelters. The 256M x 16 organization offers a good balance between capacity and bus width, simplifying PCB routing. For optimal performance, pair with a network processor like the Intel IXP2800 and use proper decoupling capacitors. The device's low power consumption also aids in meeting energy efficiency standards.
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Automotive Infotainment
The K4B4G1646D-BMK0 is suitable for automotive infotainment systems that require robust memory in a wide temperature range. Its -40°C to 95°C operating range covers automotive cabin and under-hood conditions. The 1.35V low-voltage operation reduces power consumption, which is critical in vehicles with limited electrical budgets. The 1600 Mbps speed supports smooth multimedia playback and navigation. The 96FBGA package is compact and reliable for vibration-prone environments. For automotive applications, consider using the AEC-Q100 qualified version if available. Pair with an automotive-grade SoC like the Qualcomm Snapdragon Automotive Platform and ensure proper EMC protection.
추천
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BMK0 provides reliable memory for data acquisition and processing. The industrial temperature range ensures operation in clinical environments, and the low power consumption is beneficial for battery-powered portable devices. The 1600 Mbps data rate supports real-time signal processing and image rendering. The lead-free and halogen-free construction meets medical device environmental standards. The 96FBGA package allows for compact PCB designs, which is essential for handheld devices. For medical applications, ensure compliance with IEC 60601 standards and use isolated power supplies. Pair with a medical-grade microcontroller like the STM32L4 series.
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Embedded Systems
The K4B4G1646D-BMK0 is a versatile memory solution for embedded systems requiring a balance of performance and power efficiency. Its 1.35V operation reduces power consumption, making it ideal for battery-powered IoT devices and portable instruments. The 1600 Mbps data rate provides ample bandwidth for embedded processors and FPGAs. The industrial temperature range supports outdoor and industrial deployments. The 96FBGA package is suitable for space-constrained designs. For embedded applications, consider using a processor with a DDR3L controller, such as the NXP i.MX6 or Xilinx Zynq. Ensure proper signal integrity by following layout guidelines in the datasheet.
추천
Test and Measurement
In test and measurement equipment like oscilloscopes and logic analyzers, the K4B4G1646D-BMK0 provides high-speed memory for data buffering and waveform storage. The 1600 Mbps data rate enables fast data acquisition, while the 1.35V operation reduces heat in benchtop instruments. The industrial temperature range ensures stable operation in lab environments. The 256M x 16 organization offers sufficient depth for long recordings. The 96FBGA package allows for compact instrument designs. For high-speed data capture, pair with an FPGA like the Xilinx Kintex-7 and use proper termination. The device's low power consumption also contributes to energy-efficient instruments.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4B4G1646D-BMK0 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4B4G1646D-BMH9 | K4B4G1646E-BYK0 | MT41K256M16HA-125 | NT5CB256M16CP-DI |
|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Nanya Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
| Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | -40°C to 95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Industrial temperature range (-40°C to 95°C) (vs K4B4G1646D-BMH9)
- Lower speed grade (1600 Mbps) for lower power (vs K4B4G1646E-BYK0)
- Samsung D-die proven reliability (vs MT41K256M16HA-125)
설계 노트
For high-speed DDR3L signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within +/- 0.5mm for DQ/DQS groups. Use ground planes beneath the memory to reduce noise. Refer to the Samsung PCB layout guidelines in the datasheet.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the pins. Use a dedicated VTT regulator for the termination voltage, such as the TI TPS51200, to provide 0.675V for DDR3L. Ensure the VREF voltage is clean and stable, typically 0.675V, and route it away from switching noise.
The K4B4G1646D-BMK0 has a maximum power dissipation of approximately 1.5W at 1600 Mbps. Ensure adequate airflow or a thermal pad to the PCB to keep the junction temperature below 95°C. In industrial environments, consider using a heatsink if the ambient temperature exceeds 70°C.
규정 준수 정보
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory components.
